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EMD10N06E |
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| Part Number | EMD10N06E |
| Manufacturer | Excelliance MOS |
| Description | EMD10N06E N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 10mΩ ID 100A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage Continuous Drain Current Pulsed . |
| Features | 014/8/15 p.1 EMD10N06E ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current On‐State Drain Current1 Drain‐Source On‐State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = ±20V VDS = 48V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 125 °C VDS = 10V, VGS = 10V VGS = 10V, ID = 20A VDS = 5V, ID = 20A DYNAMIC 60 V 23 4 ±10. |
| Datasheet |
 EMD10N06E Data Sheet
PDF 225.85KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | EMD10N06A |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 2 | EMD10N70F |
Excelliance MOS |
MOSFET |
|
| 3 | EMD10 |
JCET |
Dual Digital Transistors |
|
| 4 | EMD11N15E |
Excelliance MOS |
Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 5 | EMD11N15F |
Excelliance MOS |
Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 6 | EMD12 |
Rohm |
Power management (dual digital transistors) |
|
| 7 | EMD12 |
JCET |
Dual Digital Transistors |
|
| 8 | EMD12 |
Jin Yu Semiconductor |
General purpose transistors |
|
| 9 | EMD12N06A |
Excelliance MOS |
MOSFET |
|
| 10 | EMD12N06H |
Excelliance MOS |
MOSFET |
|
Desde 2024. D4U Semiconductor.
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