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EMD11N15E Single N-Channel Logic Level Enhancement Mode Field Effect Transistor Datasheet


EMD11N15E

Excelliance MOS
EMD11N15E

Part Number EMD11N15E
Manufacturer Excelliance MOS
Description N-CH BVDSS 150V RDSON (MAX.)@VGS=10V 11.0mΩ ID @TC=25℃ 120A ID @TA=25℃ 10A Single N Channel MOSFET Rg 100% Tested Pb-Free Lead Plating & Halogen Free ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain C...
Features limited by maximum junction temperature. 2Duty cycle < 1% 362.5°C / W when mounted on a 1 in2 pad of 2 oz copper. 4Guarantee by Engineering test TYPICAL MAXIMUM 0.45 62.5 UNIT °C/W 2021/3/15 P.1 A.0 EMD11N15E ▪ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS MIN STATIC Drain-Source Breakdown Voltage4 Gate Threshold Voltage4 Gate-Body Leakage4 Zero Gate Voltage Drain Current4 On-State Drain Current1 Drain-Source On-State Resistance1,4 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = 250uA 15...

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Excelliance MOS
EMD11N15F
Part Number EMD11N15F
Manufacturer Excelliance MOS
Title Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
Description BVDSS 150V RDSON (MAX.) 11.5mΩ ID 45A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RA.
Features / W 2022/12/19 p.1 ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS EMD11N15F LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drai.

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