EMB08N03V |
Part Number | EMB08N03V |
Manufacturer | Excelliance MOS |
Description | N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 8.2mΩ ID 22A G UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL EMB08N03V LIMITS UNIT Gate‐Source Voltage Continuous Drain Current . |
Features | dth limited by maximum junction temperature. 2Duty cycle 1% 350°C / W when mounted on a 1 in2 pad of 2 oz copper. 6 °C / W 50 2017/8/28 p.1 EMB08N03V ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 30 V Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current On‐State Drain Current1 Drain‐Source On‐State Resistance1 Forward Transconductance1 VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VDS = VGS, ID = 250A VDS = 0V, VGS = ±20. |
Datasheet |
EMB08N03V Data Sheet
PDF 235.38KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | EMB08N03A |
Excelliance MOS |
MOSFET | |
2 | EMB08N06A |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
3 | EMB08N06CS |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
4 | EMB08N06H |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
5 | EMB08N06VS |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
6 | EMB08K04G |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
7 | EMB08K04HP |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
8 | EMB02K03HP |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
9 | EMB02N03HR |
Excelliance MOS |
MOSFET | |
10 | EMB02N03HS |
Excelliance MOS |
MOSFET |