logo

EMB08N06CS N-Channel Logic Level Enhancement Mode Field Effect Transistor Datasheet


EMB08N06CS

Excelliance MOS
EMB08N06CS

Part Number EMB08N06CS
Manufacturer Excelliance MOS
Description EMB08N06CS N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 8mΩ ID 60A G UIS, Rg 100% Tested S Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LI...
Features t rating is package limited. UNIT V A mJ W °C UNIT °C / W 2017/3/23 p.1 EMB08N06CS ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = ±20V VDS = 48V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 125 °C VDS = 5V, VGS = 10V VGS ...

Document Datasheet EMB08N06CS datasheet pdf (314.16KB)



logo    Since 2024. D4U Semiconductor.   |   Contact Us   |   Privacy Policy