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EMB02N03HS |
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| Part Number | EMB02N03HS |
| Manufacturer | Excelliance MOS |
| Description | N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 2.5mΩ ID 100A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free EMB02N03HS ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage Continuous Drain Current1 Puls. |
| Features | hen mounted on a 1 in2 pad of 2 oz copper. UNIT V A mJ W °C UNIT °C / W 2016/11/30 p.1 EMB02N03HS ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current On‐State Drain Current1,4 Drain‐Source On‐State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = ±16V VDS = 24V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125 °C VDS = 1. |
| Datasheet |
 EMB02N03HS Data Sheet
PDF 211.33KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | EMB02N03HR |
Excelliance MOS |
MOSFET |
|
| 2 | EMB02N60AB |
Excelliance MOS |
MOSFET |
|
| 3 | EMB02N60CSB |
Excelliance MOS |
MOSFET |
|
| 4 | EMB02K03HP |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 5 | EMB02Q03HP |
Excelliance MOS |
MOSFET |
|
| 6 | EMB03K03HP |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 7 | EMB03N03A |
Excelliance MOS |
MOSFET |
|
| 8 | EMB03N03H |
Excelliance MOS |
MOSFET |
|
| 9 | EMB03N03HR |
Excelliance MOS |
MOSFET |
|
| 10 | EMB03N03V |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
Desde 2024. D4U Semiconductor.
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