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EMB05N10HS |
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| Part Number | EMB05N10HS |
| Manufacturer | Excelliance MOS |
| Description | N-CH BVDSS 100V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 5.5mΩ 7.5mΩ ID @TC=25℃ 122.0A ID @TA=25℃ 16.0A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current VGS TC = 25 °C T. |
| Features | bient3 RθJA 1Pulse width limited by maximum junction temperature. 2Duty cycle < 1％ 350°C / W when mounted on a 1 in2 pad of 2 oz copper. 4Guarantee by Engineering test TYPICAL 2020/9/2 A.0 EMB05N10HS LIMITS ±20 122 77 16 13 196 36 64.8 32.4 138.9 55.6 2.5 1.6 -55 to 150 UNIT V A mJ W W °C MAXIMUM 0.9 50 UNIT °C/W P.1 EMB05N10HS ▪ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS MIN STATIC Drain-Source Breakdown Voltage4 Gate Threshold Voltage4 Gate-Body Leakage4 Zero Gate Voltage Drain Current4 On-State Drain Current1 Drain-Sou. |
| Datasheet |
 EMB05N10HS Data Sheet
PDF 512.42KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | EMB05N10H |
Excelliance MOS |
Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 2 | EMB05N03GH |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 3 | EMB05N03HR |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 4 | EMB02K03HP |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 5 | EMB02N03HR |
Excelliance MOS |
MOSFET |
|
| 6 | EMB02N03HS |
Excelliance MOS |
MOSFET |
|
| 7 | EMB02N60AB |
Excelliance MOS |
MOSFET |
|
| 8 | EMB02N60CSB |
Excelliance MOS |
MOSFET |
|
| 9 | EMB02Q03HP |
Excelliance MOS |
MOSFET |
|
| 10 | EMB03K03HP |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
Desde 2024. D4U Semiconductor.
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