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EMB05N10H Single N-Channel Logic Level Enhancement Mode Field Effect Transistor Datasheet


EMB05N10H

Excelliance MOS
EMB05N10H

Part Number EMB05N10H
Manufacturer Excelliance MOS
Description N-CH BVDSS 100V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 5.5mΩ 7.5mΩ ID @TC=25℃ 122.0A ID @TA=25℃ 16.0A Single N Channel MOSFET UIS, ...
Features bient3 RθJA 1Pulse width limited by maximum junction temperature. 2Duty cycle < 1% 350°C / W when mounted on a 1 in2 pad of 2 oz copper. 4Guarantee by Engineering test TYPICAL 2020/8/4 A.1 EMB05N10H LIMITS ±20 122 77 16 13 196 36 64.8 32.4 138.9 55.6 2.5 1.6 -55 to 150 UNIT V A mJ W W °C ...

Document Datasheet EMB05N10H datasheet pdf (512.00KB)



EMB05N10HS

Excelliance MOS
EMB05N10HS
Part Number EMB05N10HS
Manufacturer Excelliance MOS
Title Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
Description N-CH BVDSS 100V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 5.5mΩ 7.5mΩ ID @TC=25℃ 122.0A ID @TA=25℃ 16.0A Single N Channel MOSFET UIS, .
Features bient3 RθJA 1Pulse width limited by maximum junction temperature. 2Duty cycle < 1% 350°C / W when mounted on a 1 in2 pad of 2 oz copper. 4Guarantee by Engineering test TYPICAL 2020/9/2 A.0 EMB05N10HS LIMITS ±20 122 77 16 13 196 36 64.8 32.4 138.9 55.6 2.5 1.6 -55 to 150 UNIT V A mJ W W °C .

Document EMB05N10HS datasheet pdf



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