Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
BUZ11A |
| Part Number | BUZ11A |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | isc N-Channel Mosfet Transistor ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.055Ω(Max) ·Avalanche rugged technology ·High current capability ·175℃ Operating Temperature ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITI. |
| Features |
·Static Drain-Source On-Resistance : RDS(on) = 0.055Ω(Max) ·Avalanche rugged technology ·High current capability ·175℃ Operating Temperature ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High current,high speed switching ·Solenoid and relay drivers ·Regulators ·DC-DC & DC-AC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYM. |
BUZ11A |
| Part Number | BUZ11A |
| Manufacturer | Siemens Semiconductor Group |
| Title | Power Transistor |
| Description | BUZ 11 A Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 11 A VDS 50 V ID 26 A RDS(on) 0.055 Ω Package TO-220 AB Ordering Code C67078-S1301-A3 Maximum Ratings Parameter Continuous drain current Symbol Values 2. |
| Features | 5°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 50 3 0.1 10 10 0.04 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 µA VDS = 50 V, VGS = 0 V, Tj = 25 °C VDS = 50 V, VGS = 0 V, Tj = 125 °C Gate-source leakage cur. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BUZ11 |
STMicroelectronics |
N-CHANNEL MOSFET |
|
| 2 | BUZ11 |
Siemens Semiconductor Group |
Power Transistor |
|
| 3 | BUZ11 |
Intersil Corporation |
N-Channel Power MOSFET |
|
| 4 | BUZ11 |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 5 | BUZ11 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 6 | BUZ11 |
INCHANGE |
N-Channel MOSFET |
|
| 7 | BUZ110S |
Siemens Semiconductor Group |
Power Transistor |
|
| 8 | BUZ110SL |
Siemens Semiconductor Group |
Power Transistor |
|
| 9 | BUZ111S |
Siemens Semiconductor Group |
Power Transistor |
|
| 10 | BUZ111SL |
Siemens Semiconductor Group |
Power Transistor |
|
Desde 2024. D4U Semiconductor.
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