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BUZ11A |
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| Part Number | BUZ11A |
| Manufacturer | INCHANGE |
| Description | isc N-Channel Mosfet Transistor ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.055Ω(Max) ·Avalanche rugged technology ·High current capability ·175℃ Operating Temperature ·High speed swit... |
| Features |
·Static Drain-Source On-Resistance : RDS(on) = 0.055Ω(Max) ·Avalanche rugged technology ·High current capability ·175℃ Operating Temperature ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High current,high speed switching ·Solenoid and relay drivers ·Regulators ·DC-DC & DC-AC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 50 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 26 A IDM Drain Current-Single Plused 104 A Ptot Tot... |
| Document |
 BUZ11A Data Sheet
PDF 224.59KB |
Similar Datasheet
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| 1 | BUZ11 |
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Desde 2024. D4U Semiconductor.
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