Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
BUZ11 |
| Part Number | BUZ11 |
| Manufacturer | ON Semiconductor |
| Title | N-Channel Power MOSFET |
| Description | Data Sheet BUZ11 September 2013 File Number 2253.2 N-Channel Power MOSFET 50V, 30A, 40 mΩ This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high. |
| Features |
• 30A, 50V • rDS(ON) = 0.040Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S Packaging JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE . |
BUZ11 |
| Part Number | BUZ11 |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | isc N-Channel Mosfet Transistor BUZ11 ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.04Ω(Max) ·SOA is Power Dissipation Limited ·High input impedance ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION Designed for appl. |
| Features |
·Static Drain-Source On-Resistance : RDS(on) = 0.04Ω(Max) ·SOA is Power Dissipation Limited ·High input impedance ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switching transistors requ. |
BUZ11 |
| Part Number | BUZ11 |
| Manufacturer | STMicroelectronics |
| Title | N-CHANNEL MOSFET |
| Description | ® BUZ11 N - CHANNEL 50V - 0.03Ω - 33A TO-220 STripFET™ MOSFET T YPE BUZ 11 s s s s s V DSS 50 V R DS(o n) < 0.04 Ω ID 33 A TYPICAL RDS(on) = 0.03 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE 3 1 2 APPLICATIONS HIGH CURRENT, HIGH SPEED. |
| Features | datasheet. o o Value 50 50 ± 20 33 134 90 -65 to 175 175 E 55/150/56 Un it V V V A A W o o C C July 1999 1/8 BUZ11 THERMAL DATA R thj -case R thj -amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 1.67 62.5 o o C/W C/W AVALANCHE CHARACTERISTICS Symbo l IAR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ < 1%) S. |
BUZ11 |
| Part Number | BUZ11 |
| Manufacturer | Fairchild Semiconductor |
| Title | N-Channel Power MOSFET |
| Description | Data Sheet BUZ11 September 2013 File Number 2253.2 N-Channel Power MOSFET 50V, 30A, 40 mΩ This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high. |
| Features |
• 30A, 50V • rDS(ON) = 0.040Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S Packaging JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE ©2001 Fairchild Semiconductor Corporation BUZ11 R. |
BUZ11 |
| Part Number | BUZ11 |
| Manufacturer | Siemens Semiconductor Group |
| Title | Power Transistor |
| Description | BUZ 11 Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 11 VDS 50 V ID 30 A RDS(on) 0.04 Ω Package TO-220 AB Ordering Code C67078-S1301-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 30 Uni. |
| Features | less otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 50 3 0.1 10 10 0.03 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 µA VDS = 50 V, VGS = 0 V, Tj = 25 °C VDS = 50 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current I. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BUZ10 |
STMicroelectronics |
N-Channel Power MOSFET |
|
| 2 | BUZ10 |
Siemens Semiconductor Group |
Power Transistor |
|
| 3 | BUZ10 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | BUZ100 |
Siemens Semiconductor Group |
Power Transistor |
|
| 5 | BUZ100 |
INCHANGE |
N-Channel MOSFET |
|
| 6 | BUZ100L |
Siemens Semiconductor Group |
Power Transistor |
|
| 7 | BUZ100S |
Siemens Semiconductor Group |
Power Transistor |
|
| 8 | BUZ100SL |
Siemens Semiconductor Group |
Power Transistor |
|
| 9 | BUZ100SL-4 |
Siemens Semiconductor Group |
Power Transistor |
|
| 10 | BUZ101 |
Siemens |
Power Transistor |
|
Desde 2024. D4U Semiconductor.
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