Busque con el número de pieza junto con el fabricante o la descripción
BUZ11 |
Click to view a larger image
| Part Number | BUZ11 |
| Manufacturer | Siemens Semiconductor Group |
| Description | BUZ 11 Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 11 VDS 50 V ID 30 A RDS(on) 0.04 Ω Package TO-220 AB Or... |
| Features |
less otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
50 3 0.1 10 10 0.03 4
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
2.1
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
1 100
µA
VDS = 50 V, VGS = 0 V, Tj = 25 °C VDS = 50 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
IGSS
100
nA Ω 0.04
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
RDS(on)
VGS = 10 V, ID = 19 A
Semiconductor Group
2
07/96
BUZ 11
Not for new design
Electrical Characteristics, at Tj = 25°... |
| Document |
 BUZ11 Data Sheet
PDF 120.50KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BUZ10 |
STMicroelectronics |
N-Channel Power MOSFET |
|
| 2 | BUZ10 |
Siemens Semiconductor Group |
Power Transistor |
|
| 3 | BUZ10 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | BUZ100 |
Siemens Semiconductor Group |
Power Transistor |
|
| 5 | BUZ100 |
INCHANGE |
N-Channel MOSFET |
|
| 6 | BUZ100L |
Siemens Semiconductor Group |
Power Transistor |
|
Desde 2024. D4U Semiconductor.
|