BUZ11 Fairchild Semiconductor N-Channel Power MOSFET Datasheet. existencias, precio

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BUZ11

Fairchild Semiconductor
BUZ11
BUZ11 BUZ11
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Part Number BUZ11
Manufacturer Fairchild Semiconductor
Description Data Sheet BUZ11 September 2013 File Number 2253.2 N-Channel Power MOSFET 50V, 30A, 40 mΩ This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications s...
Features
• 30A, 50V
• rDS(ON) = 0.040Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S Packaging JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE ©2001 Fairchild Semiconductor Corporation BUZ11 Rev. C0 BUZ11 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified BUZ11 UNITS Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....

Document Datasheet BUZ11 Data Sheet
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