BUZ11 |
Part Number | BUZ11 |
Manufacturer | Fairchild Semiconductor |
Description | Data Sheet BUZ11 September 2013 File Number 2253.2 N-Channel Power MOSFET 50V, 30A, 40 mΩ This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications s... |
Features |
• 30A, 50V • rDS(ON) = 0.040Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S Packaging JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE ©2001 Fairchild Semiconductor Corporation BUZ11 Rev. C0 BUZ11 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified BUZ11 UNITS Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .... |
Document |
BUZ11 Data Sheet
PDF 470.27KB |
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