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| Part Number | BUX82 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BUX82 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min)-BUX82 = 450V(Min)-BUX83 ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as high-speed power switch at high voltage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) . |
| Features | emi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage BUX82 BUX83 BUX83 VCE(sat)-1 Collector-Emitter Saturation Voltage BUX82 BUX83 VCE(sat)-2 Collector-Emitter Saturation Voltage BUX82 BUX83 VBE(sat)-1 Base-Emitter Saturation Voltage. |
similar datasheet
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|---|---|---|---|---|
| 1 | BUX80 |
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| 2 | BUX80 |
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SILICON NPN PLANAR TRANSISTOR |
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| 3 | BUX80 |
Infineon Technologies |
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| 4 | BUX80 |
INCHANGE |
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| 5 | BUX81 |
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| 6 | BUX81 |
SavantIC |
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| 7 | BUX81 |
Seme LAB |
SILICON NPN PLANAR TRANSISTOR |
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| 8 | BUX81 |
INCHANGE |
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|
| 9 | BUX83 |
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| 10 | BUX84 |
NXP |
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Desde 2024. D4U Semiconductor.
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