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BUX82 |
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| Part Number | BUX82 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min)-BUX82 = 450V(Min)-BUX83 ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATI... |
| Features |
emi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-Emitter Breakdown Voltage
BUX82 BUX83 BUX83
VCE(sat)-1
Collector-Emitter Saturation Voltage
BUX82 BUX83
VCE(sat)-2
Collector-Emitter Saturation Voltage
BUX82 BUX83
VBE(sat)-1 Base-Emitter Saturation Voltage VBE(sat)-2 Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
BUX82 BUX83
IEBO
Emitter Cutoff Current
hFE
DC Current Gain
CONDITIONS
IC= 50mA ; IB= 0
IC= 4A; IB= 1.25A
IC= 2.5A; IB... |
| Document |
 BUX82 Data Sheet
PDF 201.47KB |
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