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| Part Number | BUX81 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BUX81 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-3 package www.datasheet4u.com ·High voltage ;fast switching speed ·Low saturation voltage APPLICATIONS ·Switching-mode power supplies ,CRT scanning,inverters,and other industrial applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION BUX81 Fig.1 simplified outline (T. |
| Features | ors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=0.1A; L=25mH IC=5 A;IB=1 A IC=8 A;IB=2.5 A. |
| Part Number | BUX81 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching-mode power supplies, CRT scanning, Inverters, and other industrial applications. ABSOLUTE MAXI. |
| Features | on NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 2.5A VBE(sat)-1 Base-Emitter Saturation Voltage IC= 5A; IB= 1A VBE(sat)-2 Base-Emitter Sat. |
| Part Number | BUX81 |
| Manufacturer | Seme LAB |
| Title | SILICON NPN PLANAR TRANSISTOR |
| Description | BUX81 MECHANICAL DATA Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 0. |
| Features |
ctor – Emitter Voltage RBE = 100Ω VCEO Collector – Emitter Voltage(open base) IC Collector Current (d.c) ICM Peak Collector Current tp = 2ms IB Base Current (d.c) Ptot Total Power Dissipation Tmb = 50°C TSTG Storage Temperature Range TJ Maximum Junction Temperature 1000V 500V 450V 10A 15A 4A 150W -65 to +200°C +200°C Semelab Plc reserves the right to change test conditions, param. |
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