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| Part Number | BUV52A |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BUV52A |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistor |
| Description | ·High Current Capability ·Low Collector Saturation Voltage- : VCE(sat)= 0.9V (Max.) @IC= 7A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current, high speed, high power applications. Absolute maximum rating. |
| Features | stor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 VCE(sat) VBE(sat) ICER ICEV Collector-Emitter Saturation Voltage IC= 7A; IB= 0.7A IC= 7A; IB= 0.7A; TC= 100℃ Base-Emitter Saturation Voltage IC= 7A; IB= 0.7A IC= 7A; IB= 0.7A;. |
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| 1 | BUV52 |
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| 2 | BUV50 |
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| 8 | BUV10 |
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| 9 | BUV10N |
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| 10 | BUV11 |
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Desde 2024. D4U Semiconductor.
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