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| Part Number | BUV50 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BUV50 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-3 package ·High dielectric strength ·Short switching time APPLICATIONS ·Suitable for use in clocked voltatge converters PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM. |
| Features | pecified PARAMETER CONDITIONS MIN TYP. www.datasheet4u.com BUV50 SYMBOL MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ; L=25mH 125 V V(BR)EBO Emitter-base breakdown voltage IE=50mA; IC=0 IC=10A; IB=0.5A TC=100 IC=20A; IB=2A TC=100 IC=24A; IB=3A TC=100 IC=20A; IB=2A TC=100 IC=24A; IB=3A TC=100 VCB=VCBO(BR); IE=0 TC=100 VEB=5V; IC=0 7 0.8 0.9 0.9 1.5 1.2 1.8 1.6 1.7 1.. |
| Part Number | BUV50 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High Current Capability ·Low Collector Saturation Voltage- : VCE(sat)= 0.8V (Max.) @IC= 10A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current, high speed, high power applications. Absolute maximum rati. |
| Features | AL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 0.5A IC= 10A; IB= 0.5A;TC= 100℃ VCE (sat)-2 Collector-Emitter Saturation Voltage IC= 20A ;IB= 2A IC= 20A; IB= 2A;TC= 100℃ VCE. |
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