BUV52A |
Part Number | BUV52A |
Manufacturer | Inchange Semiconductor |
Title | Silicon NPN Power Transistor |
Features |
stor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
VCE(sat) VBE(sat)
ICER ICEV
Collector-Emitter Saturation Voltage
IC= 7A; IB= ... |
Document |
BUV52A Data Sheet
PDF 203.94KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BUV52 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
2 | BUV52A |
Seme LAB |
FAST SWITCHING POWER TRANSISTOR | |
3 | BUV50 |
INCHANGE |
NPN Transistor | |
4 | BUV50 |
SavantIC |
SILICON POWER TRANSISTOR | |
5 | BUV50 |
Seme LAB |
Bipolar NPN Device | |
6 | BUV51 |
Seme LAB |
Bipolar NPN Device |