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| Part Number | BUV26 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BUV26 |
| Manufacturer | ON Semiconductor |
| Title | NPN Silicon Power Transistor |
| Description | TO−220 Electronic versions are uncontrolled except when ac. |
| Features |
• Switch-mode Power Supplies • High Frequency Converters • Relay Drivers • Driver • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage VCEO(sus) 90 Vdc Collector−Base Voltage VCBO 180 Vdc Emitter−Base Voltage VEBO 7.0 Vdc Collector Current − Continuous IC 20 Adc Collector Curr. |
| Part Number | BUV26 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-220C package ·Low collector saturation voltage ·Fast switching speed APPLICATIONS ·For use in high frequency and efficiency converters,switching regulators and motor control PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Tc=25 ) SY. |
| Features | Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. www.datasheet4u.com BUV26 SYMBOL MAX UNIT VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICEX IEBO Collector-emitter sustaining voltage IC=0.2 A ;IB=0;L=25mH IC=6A ;IB=0.6 A IC=12A; IB=1.2A IC=6A ;IB=0.6 A IC=12A; IB=1.2A 90 V Collector-emitter saturation voltage 0.6 V Collector-emitter saturati. |
| Part Number | BUV26 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 90V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for fast switching applications such as high frequency and efficiency converters, switching regulators and m. |
| Features | ilicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 12A; IB= 1.2A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A; IB= 0.6A VBE(sat)-1 Base-Emitter Saturation Voltage IC= 12A; IB= 1.2A VBE(sat)-2 Base-E. |
| Part Number | BUV26 |
| Manufacturer | Comset Semiconductors |
| Title | SILICON POWER TRANSISTOR |
| Description | SEMICONDUCTORS BUV26 – BUV26A SILICON POWER TRANSISTORS High-speed,NPN power transistors in a TO-220 envelope. They are intended for fast switching applications such as high frequency and efficiency converters, switching regulators and motor control. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS V. |
| Features |
TORS
BUV26 – BUV26A ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Value Symbol ICEX IEBO VCE0sust Ratings Collector Cutoff Current (*) Emitter Cutoff Current Collector-Emitter Sustaining Voltage Collector-Emitter saturation Voltage Test Condition(s) Min BUV26 VCE =VCESMax VBE= 1.5V, TJ= 125°C BUV26A BUV26 VEB= 5 V, IC= 0 BUV26A BUV26 IB= 0 , IC= 0.2 A L = 25 mH BUV26A BUV26 IC= 6 A. |
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