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| Part Number | BUV21 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BUV21 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-3 package ·High DC current gain@IC=12A ·Fast switching times ·Low collector saturation voltage APPLICATIONS ·Designed for high current,high speed and high power applications. PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute. |
| Features | Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.2A; IB=0;L=25mH IE=50mA; IC=0 IC=12 A;. |
| Part Number | BUV21 |
| Manufacturer | ETC |
| Title | NPN Silicon Low Frequency High Power Switching Transistor |
| Description | BUV20,BUV21,BUV22,BUV23,BUV24 NPN Silicon Low Frequency High Power Switching Transistor Features: 1. Heavy working current.Good temperature stability.Excellent thermal fatigue capability. 2. Good Switching Characteristic. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for . |
| Features | 1. Heavy working current.Good temperature stability.Excellent thermal fatigue capability. 2. Good Switching Characteristic. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for Low-speed switch,low frequency power amplify,power adjustment. 5. Quality Class: JP, JT, JCT, GS, G, G+ TECHNICAL DATA: (Ta = 25°C ) Parameter name Total Dissipation (Tc=25°C) Symbols Unit Ptot . |
| Part Number | BUV21 |
| Manufacturer | Semelab |
| Title | Bipolar NPN Device |
| Description | BUV21 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 1.47 (0.058) 1.60 (. |
| Features | . |
| Part Number | BUV21 |
| Manufacturer | ON Semiconductor |
| Title | NPN Silicon Power Transistor |
| Description | BUV21 SWITCHMODEt Series NPN Silicon Power Transistor This device is designed for high speed, high current, high power applications. Features • High DC Current Gain: hFE min = 20 at IC = 12 A • Low VCE(sat), VCE(sat) max = 0.6 V at IC = 8 A • Very Fast Switching Times: TF max = 0.4 ms at IC = 25 A . |
| Features |
• High DC Current Gain: hFE min = 20 at IC = 12 A • Low VCE(sat), VCE(sat) max = 0.6 V at IC = 8 A • Very Fast Switching Times: TF max = 0.4 ms at IC = 25 A • These are Pb−Free Devices* MAXIMUM RATINGS Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector−Emitter Voltage (VBE = −1.5 V) Collector−Emitter Voltage (RBE = 100 W) Collector−Current − Continuous − Peak (. |
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Desde 2024. D4U Semiconductor.
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