Part Number | BUV20 |
Distributor | Stock | Price | Buy |
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Part Number | BUV20 |
Manufacturer | STMicroelectronics |
Title | HIGH CURRENT NPN SILICON TRANSISTOR |
Description | The BUV20 is silicon Multiepitaxial Planar NPN transistor mounted in jedec TO-3 metal case. It is intended for use in switching and linear applications in military and industrial equipment. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CER V CEX V CEO V EBO IC I CM IB P tot T . |
Features | A W o o C C January 2000 1/4 BUV20 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 0.7 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEX I CEO I EBO Parameter Collector Cut-off Current (V BE = -1.5V) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 160 V V CE = 160 V V CE = 100 V V EB = 5 V I C = . |
Part Number | BUV20 |
Manufacturer | Seme LAB |
Title | NPN MULTI - EPITAXIAL POWER TRANSISTOR |
Description | BUV20 MECHANICAL DATA Dimensions in mm(inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) NPN MULTI - EPITAXIAL POWER TRANSISTOR 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675). |
Features |
• HIGH CURRENT • FAST SWITCHING • HIGH RELIABILITY 1 2 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) APPLICATIONS TO –3 PIN 1 — Base PIN 2 — Emitter Case is Collector. • Industrial Equipment ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCER VCEX VCEO VEBO IC ICM IB Ptot Tstg, Tj Collector – Base Voltage (IE = 0) Collector – Emitter Voltage (RBE = 100W) C. |
Part Number | BUV20 |
Manufacturer | Motorola Inc |
Title | NPN Transistor |
Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BUV20/D SWITCHMODE Series NPN Silicon Power Transistor . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min = 20 at IC = 25 A hFE min = 10 at IC = 50 A • Low VCE(sat): VCE(sat) max. = 0.6. |
Features | ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ. |
Part Number | BUV20 |
Manufacturer | Inchange Semiconductor |
Title | Silicon NPN Power Transistor |
Description | ·Low Collector Saturation Voltage- : VCE(sat)= 0.6V(Max.) @IC= 25A ·High DC Current Gain- : hFE= 20(Min.)@ IC= 25A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed, high current, high power applications. . |
Features | CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA; IB= 0 125 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 7 V VCE(sat)-1☆ Collector-Emitter Saturation Voltage IC= 25A; IB= 2.5A 0.6 V VCE(sat)-2☆ Collector-Emitter Saturation Voltage IC= 50A; IB= 5A 1.2 V VBE(sat) Base. |
Part Number | BUV20 |
Manufacturer | TT |
Title | SILICON MULTI-EPITAXIAL NPN TRANSISTOR |
Description | SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUV20 Hermetic TO3 (TO-204AE) Metal Package High Voltage, High Current, Fast Switching Suited For High Current Switching Industrial Applications High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO . |
Features | rmation furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone: +44 (0) 1455 556565 Fax: +44 . |
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