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BUV20 |
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| Part Number | BUV20 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The BUV20 is silicon Multiepitaxial Planar NPN transistor mounted in jedec TO-3 metal case. It is intended for use in switching and linear applications in military and industrial equipment. INTERNAL ... |
| Features |
A W
o o
C C
January 2000
1/4
BUV20
THERMAL DATA
R thj-case Thermal Resistance Junction-case Max 0.7
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CEX I CEO I EBO Parameter Collector Cut-off Current (V BE = -1.5V) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 160 V V CE = 160 V V CE = 100 V V EB = 5 V I C = 200 mA L = 25 mH 125 T case = 125 o C Min. Typ. Max. 3 12 3 1 Unit mA mA mA mA V
V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) V (BR)EB0 ∗ Emitter-base Breakdown Voltage (I C = 0) V CE(... |
| Document |
 BUV20 Data Sheet
PDF 41.62KB |
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