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| Part Number | BUT18F |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BUT18F |
| Manufacturer | NXP |
| Title | Silicon diffused power transistors |
| Description | High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 package with electrically isolated mounting base. APPLICATIONS • Converters • Inverters • Switching regulators • Motor control systems. andbook, halfpage BUT18F; BUT18AF PINNING PIN 1 2 3 mb base collector emitter mounting. |
| Features | istive load; see Figs 10 and 11 see Fig.7 open base 400 450 1.5 4 6 12 33 0.8 V V V A A A W µs PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-h PARAMETER CONDITIONS note 2 Notes 1. Mounted without heatsink compound and 30 ±5 N force on centre of package. 2. Mounted with heatsink compound and 30 ±5 N force on centre of packag. |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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| 1 | BUT18 |
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Silicon diffused power transistors |
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| 2 | BUT18 |
SavantIC |
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| 3 | BUT18A |
NXP |
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| 4 | BUT18A |
SavantIC |
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| 5 | BUT18AF |
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| 6 | BUT18AF |
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| 7 | BUT100 |
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| 8 | BUT100 |
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| 9 | BUT11 |
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| 10 | BUT11 |
Power Innovations Limited |
NPN SILICON POWER TRANSISTOR |
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Desde 2024. D4U Semiconductor.
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