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BUT11 Silicon diffused power transistors


BUT11
Part Number BUT11
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Wing Shing Computer Components
BUT11
Part Number BUT11
Manufacturer Wing Shing Computer Components
Title NPN SILICON TRANSISTOR
Description BUT11/11A HIGH VOLTAGE POWER SWITCHING APPLICATIONS NPN SILICON TRANSISTOR TO-220 ABSOLUTE MAXIMUM RATINGS (Ta=25°c) Characteristic Collector-Emitter Voltage:BUT11 :BUT11A Collector-Emitter Voltage:BUT11 :BUT11A Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current .
Features 9V , IC=0 IC=3A, IB=0.6A IC=2.5A, IB=0.5A IC=3A, IB=0.6A IC=2.5A, IB=0.5A VCC= 250V , IC=2.5A IB1= IB2=0.5A 1 1 10 1.5 1.5 1.3 1.3 1 4 0.8 V mA mA µA V V V V µS µS µS Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: [email protected] .
Power Innovations Limited
BUT11
Part Number BUT11
Manufacturer Power Innovations Limited
Title NPN SILICON POWER TRANSISTOR
Description BUT11 NPN SILICON POWER TRANSISTOR Copyright © 1997, Power Innovations Limited, UK MAY 1989 - REVISED MARCH 1997 q q q Rugged Triple-Diffused Planar Construction 100 W at 25°C Case Temperature 5 A Continuous Collector Current B C E 1 2 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact wi.
Features nform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 BUT11 NPN SILICON POWER TRANSISTOR MAY 1989 - REVISED MARCH 1997 electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V CEO(sus) ICES IEBO hFE VCE(sat) V BE(sat) ft Cob Collector-emitter sus.
TRSYS
BUT11
Part Number BUT11
Manufacturer TRSYS
Title NPN SILICON POWER TRANSISTOR
Description .
Features .
Bourns Electronic Solutions
BUT11
Part Number BUT11
Manufacturer Bourns Electronic Solutions
Title NPN SILICON POWER TRANSISTOR
Description www.DataSheet4U.com BUT11 NPN SILICON POWER TRANSISTOR ● ● ● Rugged Triple-Diffused Planar Construction 100 W at 25°C Case Temperature 5 A Continuous Collector Current B C E 1 2 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings a.
Features aSheet4U.com BUT11 NPN SILICON POWER TRANSISTOR electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER VCEO(sus) ICES IEBO hFE VCE(sat) VBE(sat) ft Cob Collector-emitter sustaining voltage Collector-emitter cut-off current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Current gain bandwid.
SavantIC
BUT11
Part Number BUT11
Manufacturer SavantIC
Title SILICON POWER TRANSISTOR
Description ·With TO-220C package www.datasheet4u.com ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BUT11 BUT11A Absolute maximum ratings (Tc=25 ) SYMBOL VCBO PARAMETER .
Features ICS Tj=25 unless otherwise specified PARAMETER BUT11 IC=0.1A; IB=0, L=25mH BUT11A BUT11 BUT11A BUT11 BUT11A IC=3A; IB=0.6A CONDITIONS www.datasheet4u.com BUT11 BUT11A SYMBOL MIN 400 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V 450 VCEsat Collector-emitter saturation voltage 1.5 IC=2.5A; IB=0.5A IC=3A; IB=0.6A 1.3 IC=2.5A; IB=0.5A VCE=Rated VCES ;VBE=0 Tj=125 VEB=9V; I.

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