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BUT11 |
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| Part Number | BUT11 |
| Manufacturer | Power Innovations Limited |
| Description | BUT11 NPN SILICON POWER TRANSISTOR Copyright © 1997, Power Innovations Limited, UK MAY 1989 - REVISED MARCH 1997 q q q Rugged Triple-Diffused Planar Construction 100 W at 25°C Case Temperature 5 A C... |
| Features |
nform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.
1
BUT11 NPN SILICON POWER TRANSISTOR
MAY 1989 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER V CEO(sus) ICES IEBO hFE VCE(sat) V BE(sat) ft Cob Collector-emitter sustaining voltage Collector-emitter cut-off current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Current gain bandwidth pro... |
| Document |
 BUT11 Data Sheet
PDF 128.38KB |
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