BUT18F |
Part Number | BUT18F |
Manufacturer | NXP (https://www.nxp.com/) |
Description | High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 package with electrically isolated mounting base. APPLICATIONS • Converters • Inverters • Switching regulators • Motor contr... |
Features |
istive load; see Figs 10 and 11 see Fig.7 open base 400 450 1.5 4 6 12 33 0.8 V V V A A A W µs PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT
THERMAL CHARACTERISTICS SYMBOL Rth j-h PARAMETER CONDITIONS note 2 Notes 1. Mounted without heatsink compound and 30 ±5 N force on centre of package. 2. Mounted with heatsink compound and 30 ±5 N force on centre of package. 1999 Jun 11 2 VALUE 6.15 3.65 UNIT K/W K/W
thermal resistance from junction to external heatsink note 1
Philips Semiconductors
Product specification
Silicon diffused power transistors
LIMITING V... |
Document |
BUT18F Data Sheet
PDF 69.08KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BUT18 |
NXP |
Silicon diffused power transistors | |
2 | BUT18 |
SavantIC |
SILICON POWER TRANSISTOR | |
3 | BUT18A |
NXP |
Silicon diffused power transistors | |
4 | BUT18A |
SavantIC |
SILICON POWER TRANSISTOR | |
5 | BUT18AF |
NXP |
Silicon diffused power transistors | |
6 | BUT18AF |
SavantIC |
SILICON POWER TRANSISTOR |