BUT18F NXP Silicon diffused power transistors Datasheet. existencias, precio

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BUT18F

NXP
BUT18F
BUT18F BUT18F
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Part Number BUT18F
Manufacturer NXP (https://www.nxp.com/)
Description High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 package with electrically isolated mounting base. APPLICATIONS • Converters • Inverters • Switching regulators • Motor contr...
Features istive load; see Figs 10 and 11 see Fig.7 open base 400 450 1.5 4 6 12 33 0.8 V V V A A A W µs PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-h PARAMETER CONDITIONS note 2 Notes 1. Mounted without heatsink compound and 30 ±5 N force on centre of package. 2. Mounted with heatsink compound and 30 ±5 N force on centre of package. 1999 Jun 11 2 VALUE 6.15 3.65 UNIT K/W K/W thermal resistance from junction to external heatsink note 1 Philips Semiconductors Product specification Silicon diffused power transistors LIMITING V...

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