BLS6G2735LS-30 Datasheet. existencias, precio

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BLS6G2735LS-30 S-band LDMOS transistor


BLS6G2735LS-30
PDF 553.42KB
Part Number BLS6G2735LS-30
Distributor Stock Price Buy
NXP
BLS6G2735LS-30
PDF 681.75KB
Part Number BLS6G2735LS-30
Manufacturer NXP
Title S-band LDMOS transistor
Description 30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz. Table 1. Application information Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 50 mA. Test signal f (GHz) pulsed RF pulsed RF pulsed RF 3.1 to 3.5 2.7 to 3.3 2.7 to 3.5 V.
Features and benefits        Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (2.7 GHz to 3.5 GHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  S-band radar applications in the frequency range 2.7 GHz to 3.5 GHz Free Datasheet h.

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