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| Part Number | BLS6G2731-6G |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BLS6G2731-6G |
| Manufacturer | NXP Semiconductors |
| Title | LDMOS S-Band radar power transistor |
| Description | 6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 100 µs; δ = 10 %; IDq = 25 mA; in a class-AB production test circuit. Mode of operation pulsed RF f (GHz) 2.7 to 3.1 VDS (V) 32 PL (W. |
| Features | I Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 25 mA, a tp of 100 µs and a δ of 10 %: N Output power = 6 W N Power gain = 15 dB N Efficiency = 33 % I Integrated ESD protection I High flexibility with respect to pulse formats I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (2.7 GHz to 3. |
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