BLS6G2731S-120 Datasheet. existencias, precio

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BLS6G2731S-120 LDMOS S-band Radar Power Transistor


BLS6G2731S-120
PDF 112.86KB
Part Number BLS6G2731S-120
Distributor Stock Price Buy
Ampleon
BLS6G2731S-120
PDF 369.38KB
Part Number BLS6G2731S-120
Manufacturer Ampleon
Title LDMOS S-band radar power transistor
Description 120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 100 s;  = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation f VDS PL Gp D tr tf (GHz) (V) (W.
Features  Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 100 s with  of 10 %:  Output power = 120 W  Power gain = 13.5 dB  Efficiency = 48 %  Easy power control  Integrated ESD protection  High flexibility with respect to pulse.

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