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| Part Number | BFY90 |
| Distributor | Stock | Price | Buy |
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| Part Number | BFY90 |
| Manufacturer | STMicroelectronics |
| Title | WIDE BAND VHF/UHF AMPLIFIER |
| Description | This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer . |
| Features | . |
| Part Number | BFY90 |
| Manufacturer | Central Semiconductor |
| Title | NPN SILICON RF TRANSISTORS |
| Description | . |
| Features | . |
| Part Number | BFY90 |
| Manufacturer | Comset Semiconductors |
| Title | WIDE BAND VHF/UHF AMPLIFIER |
| Description | : • SILICON PLANAR EPITAXIAL TRANSISTORS • TO-72 METAL CASE • VERY LOW NOISE APPLICATIONS : • TELECOMMUNICATIONS • WIDE BAND UHF AMPLIFIER • RADIO COMMUNICATIONS The BFX89 and BFY90 are silicon planar epitaxial NPN transistors produced using interdigitated base emitter geometry. They are particular. |
| Features | very high fT, low reverse capacitance, excellent cross modulation properties and very low noise performance. The BFY90 is complementary to the BFR99A. Typical applications include telecommunication and radio communication equipment. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO VCER VCBO VEBO IC ICM Ptot Tstg, Tj Collector-Emitter Voltage ( IB = 0) Collector-Emitter Voltage ( RBE ≤50Ω ) Collect. |
| Part Number | BFY90 |
| Manufacturer | Seme LAB |
| Title | SILICON PLANAR EPITAXIAL NPN TRANSISTOR |
| Description | The BFY90 is a low noise transistor intended for use in broad and narrow-band amplifiers up to 1GHz. 2.54 (0.100) Nom. 4 3 2 1 TO72 Pin 1 – Emitter Pin 2 –Base Pin 3 – Collector Pin 4 – Connected to Case ABSOLUTE MAXIMUM RATINGS VCBO VCER VCEO VEBO IC(AV) ICM Ptot Tj Tstg, Collector – Base Volta. |
| Features | Y90 ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise stated) Parameter ICBO V(BR)CEO* V(BR)CER* VCEK h21E Collector Cut Off Current Test Conditions VCB = 15V IE = 0 IB = 0 RBE £ 50W IC = 2mA IC = 25mA IC = 2mA IC = 25mA IE = 0. IC = 0 IC = 2mA RG RG optimum Min. 15 30 Typ. Max. 10 Unit nA V Collector Emitter Breakdown Voltage IC = 10mA Collector Emitter Breakdown Voltage IC = 10mA Coll. |
| Part Number | BFY90 |
| Manufacturer | Motorola |
| Title | HIGH FREQUENCY TRANSISTOR |
| Description | BFX89 BFY90 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Continuous Device Dissipation <& TA = 25°C Derate above 25°C Storage Temperature Symbol v CEO v CBO VEBO "C PD TStq Value 15 30 2.5 50 200 1.14 - 65 to + 20. |
| Features | . |
| Part Number | BFY90 |
| Manufacturer | Advanced Power Technology |
| Title | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| Description | Silicon NPN transistor, designed for VHF/UHF equipment. Applications include low noise amplifier; oscillator, and mixer applications. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector . |
| Features |
• Silicon NPN, To-72 packaged VHF/UHF Transistor • Low Noise, 2.5 dB (typ) @ 500 MHz, 5v, 2.0 mA, • 1.3 GHz Current-Gain Bandwidth Product @ 25mA IC • Power Gain, GPE = 19 dB (typ) @ 200 MHz BFY90 2 13 4 1. Emitter 2. Base 3. Collector 4. Case TO-72 DESCRIPTION: Silicon NPN transistor, designed for VHF/UHF equipment. Applications include low noise amplifier; oscillator, and mixer applications. |
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