Part Number | BDW93C |
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Part Number | BDW93C |
Manufacturer | Multicomp |
Title | Darlington Transistors |
Description | Darlington Transistors BDW93, BDW94 Series Features: Designed for general-purpose amplifier and low speed switching applications • Collector-emitter sustaining voltage-VCEO (sus) = 80 V (Minimum) - BDW93B, BDW94B 100 V (Minimum) - BDW93C, BDW94C • Collector-emitter saturation voltage-VCE (sat) = 2 . |
Features |
Designed for general-purpose amplifier and low speed switching applications • Collector-emitter sustaining voltage-VCEO (sus) = 80 V (Minimum) - BDW93B, BDW94B 100 V (Minimum) - BDW93C, BDW94C • Collector-emitter saturation voltage-VCE (sat) = 2 V (Maximum) at IC = 5 A • Monolithic construction with built-in-base-emitter shunt resistor Dimension Minimum Maximum Pin : 1. Base 2. Collector 3. Emi. |
Part Number | BDW93C |
Manufacturer | STMicroelectronics |
Title | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
Description | The BDW93C is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. It is intented for use in power linear and switching applications. The complementary PNP type is BDW94C. Also BDW94B is a PNP type. 1 2 3 TO-220 INTERNAL SCH. |
Features | Junction Temperature For PNP types voltage and current values are negative. October 1999 1/6 BDW93C/BDW94B/BDW94C THERMAL DATA R thj -case Thermal Resistance Junction-case 1.56 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbo l I CBO Parameter Collector Cut-off Current (IE = 0) Test Con ditions for BDW94B for BDW93C/94C T case = 150 o C for BDW94B for BDW93C. |
Part Number | BDW93C |
Manufacturer | Fairchild Semiconductor |
Title | NPN Transistor |
Description | BDW93/A/B/C BDW93/A/B/C Hammer Drivers, Audio Amplifiers Applications • Power Darlington TR • Complement to BDW94, BDW94A, BDW94B and BDW94C respectively 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Par. |
Features | Emitter Sustaining Voltage : BDW93 : BDW93A : BDW93B : BDW93C Collector Cut-off Current : BDW93 : BDW93A : BDW93B : BDW93C ICEO Collector Cut-off Current : BDW93 : BDW93A : BDW93B : BDW93C IEBO hFE Emitter Cut-off Current * DC Current Gain VCE = 45V, IB = 0 VCE = 60V, IB = 0 VCE = 80V, IB = 0 VCE = 100V, IB = 0 VEB = 5V, IC = 0 VCE = 3V, IC = 3A VCE = 3V, IC = 5A VCE = 3V, IC = 10A IC = 5A, IB = 2. |
Part Number | BDW93C |
Manufacturer | Bourns Electronic Solutions |
Title | NPN SILICON POWER DARLINGTONS |
Description | BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS ● ● ● ● Designed for Complementary Use with BDW94, BDW94A, BDW94B and BDW94C 80 W at 25°C Case Temperature 12 A Continuous Collector Current Minimum hFE of 750 at 3V, 5 A B C E TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical con. |
Features | 50°C free air temperature at the rate of 16 mW/°C. VEBO IC IB Ptot Ptot Tj Tstg TA VCEO V CBO SYMBOL VALUE 45 60 80 100 45 60 80 100 5 12 0.3 80 2 -65 to +150 -65 to +150 -65 to +150 V A A W W °C °C °C V V UNIT PRODUCT INFORMATION 1 SEPTEMBER 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS electrical. |
Part Number | BDW93C |
Manufacturer | JILIN SINO |
Title | NPN EPITAXIAL DARLINGTON TRANSISTOR |
Description | NPN NPN EPITAXIAL DARLINGTON TRANSISTOR R BDW93C MAIN CHARACTERISTICS Package IC VCEO PC(TO-220C) 12A 100V 80W z z z z APPLICATIONS z Engine ignition z High frequency switching power supply z High frequency power transform z Commonly power amplifier circuit z BDW94C z z z z(RoHS) F. |
Features | z Complementary to BDW94C z High current capability z High switching speed z High reliability z RoHS product TO-220C ORDER MESSAGE Order codes BDW93C-O-C-N-B Marking BDW93C Halogen Free NO Package TO-220C Packaging Tube :201603A 1/5 R ABSOLUTE RATINGS (Tc=25℃) — — — . |
Part Number | BDW93C |
Manufacturer | INCHANGE |
Title | NPN Transistor |
Description | ·With TO-220 packaging ·Very high DC current gain ·Monolithic darlington transistor with integrated antiparallel collector-emitter diode ·Complement to Type BDW94C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·AC-DC motor control ·Electronic ignit. |
Features | HANGE Semiconductor isc Silicon NPN Darlington Power Transistor BDW93C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA, IB= 0 VCE(sat)1 Collector-Emitter Saturation Voltage IC= 5A ,IB= 20mA VCE(sat)2 Collector-Emitter Saturation Voltage IC= 10A ,IB= 100mA VBE(sat)1 Base-Emitter Saturation Vo. |
similar datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BDW93 |
Fairchild Semiconductor |
Hammer Drivers/ Audio Amplifiers Applications | |
2 | BDW93 |
SavantIC |
Silicon NPN Power Transistors | |
3 | BDW93 |
Multicomp |
Darlington Transistors | |
4 | BDW93 |
Bourns Electronic Solutions |
NPN SILICON POWER DARLINGTONS | |
5 | BDW93 |
INCHANGE |
NPN Transistor | |
6 | BDW93A |
Fairchild Semiconductor |
Hammer Drivers/ Audio Amplifiers Applications | |
7 | BDW93A |
SavantIC |
Silicon NPN Power Transistors | |
8 | BDW93A |
Bourns Electronic Solutions |
NPN SILICON POWER DARLINGTONS | |
9 | BDW93A |
INCHANGE |
NPN Transistor | |
10 | BDW93B |
Fairchild Semiconductor |
Hammer Drivers/ Audio Amplifiers Applications |