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BDW93C Silicon NPN Power Transistors


BDW93C
Part Number BDW93C
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Multicomp
BDW93C
Part Number BDW93C
Manufacturer Multicomp
Title Darlington Transistors
Description Darlington Transistors BDW93, BDW94 Series Features: Designed for general-purpose amplifier and low speed switching applications • Collector-emitter sustaining voltage-VCEO (sus) = 80 V (Minimum) - BDW93B, BDW94B 100 V (Minimum) - BDW93C, BDW94C • Collector-emitter saturation voltage-VCE (sat) = 2 .
Features Designed for general-purpose amplifier and low speed switching applications
• Collector-emitter sustaining voltage-VCEO (sus) = 80 V (Minimum) - BDW93B, BDW94B 100 V (Minimum) - BDW93C, BDW94C
• Collector-emitter saturation voltage-VCE (sat) = 2 V (Maximum) at IC = 5 A
• Monolithic construction with built-in-base-emitter shunt resistor Dimension Minimum Maximum Pin : 1. Base 2. Collector 3. Emi.
STMicroelectronics
BDW93C
Part Number BDW93C
Manufacturer STMicroelectronics
Title COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
Description The BDW93C is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. It is intented for use in power linear and switching applications. The complementary PNP type is BDW94C. Also BDW94B is a PNP type. 1 2 3 TO-220 INTERNAL SCH.
Features Junction Temperature For PNP types voltage and current values are negative. October 1999 1/6 BDW93C/BDW94B/BDW94C THERMAL DATA R thj -case Thermal Resistance Junction-case 1.56 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbo l I CBO Parameter Collector Cut-off Current (IE = 0) Test Con ditions for BDW94B for BDW93C/94C T case = 150 o C for BDW94B for BDW93C.
Fairchild Semiconductor
BDW93C
Part Number BDW93C
Manufacturer Fairchild Semiconductor
Title NPN Transistor
Description BDW93/A/B/C BDW93/A/B/C Hammer Drivers, Audio Amplifiers Applications • Power Darlington TR • Complement to BDW94, BDW94A, BDW94B and BDW94C respectively 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Par.
Features Emitter Sustaining Voltage : BDW93 : BDW93A : BDW93B : BDW93C Collector Cut-off Current : BDW93 : BDW93A : BDW93B : BDW93C ICEO Collector Cut-off Current : BDW93 : BDW93A : BDW93B : BDW93C IEBO hFE Emitter Cut-off Current * DC Current Gain VCE = 45V, IB = 0 VCE = 60V, IB = 0 VCE = 80V, IB = 0 VCE = 100V, IB = 0 VEB = 5V, IC = 0 VCE = 3V, IC = 3A VCE = 3V, IC = 5A VCE = 3V, IC = 10A IC = 5A, IB = 2.
Bourns Electronic Solutions
BDW93C
Part Number BDW93C
Manufacturer Bourns Electronic Solutions
Title NPN SILICON POWER DARLINGTONS
Description BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS ● ● ● ● Designed for Complementary Use with BDW94, BDW94A, BDW94B and BDW94C 80 W at 25°C Case Temperature 12 A Continuous Collector Current Minimum hFE of 750 at 3V, 5 A B C E TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical con.
Features 50°C free air temperature at the rate of 16 mW/°C. VEBO IC IB Ptot Ptot Tj Tstg TA VCEO V CBO SYMBOL VALUE 45 60 80 100 45 60 80 100 5 12 0.3 80 2 -65 to +150 -65 to +150 -65 to +150 V A A W W °C °C °C V V UNIT PRODUCT INFORMATION 1 SEPTEMBER 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS electrical.
JILIN SINO
BDW93C
Part Number BDW93C
Manufacturer JILIN SINO
Title NPN EPITAXIAL DARLINGTON TRANSISTOR
Description NPN NPN EPITAXIAL DARLINGTON TRANSISTOR R BDW93C MAIN CHARACTERISTICS Package IC VCEO PC(TO-220C) 12A 100V 80W z z z z APPLICATIONS z Engine ignition z High frequency switching power supply z High frequency power transform z Commonly power amplifier circuit z BDW94C z z z z(RoHS) F.
Features z Complementary to BDW94C z High current capability z High switching speed z High reliability z RoHS product TO-220C ORDER MESSAGE Order codes BDW93C-O-C-N-B Marking BDW93C Halogen Free NO Package TO-220C Packaging Tube :201603A 1/5 R ABSOLUTE RATINGS (Tc=25℃) — — — .
INCHANGE
BDW93C
Part Number BDW93C
Manufacturer INCHANGE
Title NPN Transistor
Description ·With TO-220 packaging ·Very high DC current gain ·Monolithic darlington transistor with integrated antiparallel collector-emitter diode ·Complement to Type BDW94C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·AC-DC motor control ·Electronic ignit.
Features HANGE Semiconductor isc Silicon NPN Darlington Power Transistor BDW93C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA, IB= 0 VCE(sat)1 Collector-Emitter Saturation Voltage IC= 5A ,IB= 20mA VCE(sat)2 Collector-Emitter Saturation Voltage IC= 10A ,IB= 100mA VBE(sat)1 Base-Emitter Saturation Vo.

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