BDW93B Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

BDW93B Silicon NPN Power Transistors


BDW93B
Part Number BDW93B
Distributor Stock Price Buy
SGS-THOMSON
BDW93B
Part Number BDW93B
Manufacturer SGS-THOMSON
Title COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
Description The BDW93B, and BDW93C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are the BDW94B and BDW94C respectively. 3.
Features 4 BDW93B/BDW93C/BDW94B/BDW94C THERMAL DATA Rthj-ca se Thermal Resistance Junction-case 1. 56 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter T est Con ditio ns ICBO Collector Cut-off Current (IE = 0) for BDW93B/94B for BDW93C/94C Tcase = 150 oC for BDW93B/94B for BDW93C/94C VCB = 80 V VCB = 100 V VCB = 80 V VCB = 100 V ICEO Collector Cut-of.
Fairchild Semiconductor
BDW93B
Part Number BDW93B
Manufacturer Fairchild Semiconductor
Title Hammer Drivers/ Audio Amplifiers Applications
Description BDW93/A/B/C BDW93/A/B/C Hammer Drivers, Audio Amplifiers Applications • Power Darlington TR • Complement to BDW94, BDW94A, BDW94B and BDW94C respectively 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Par.
Features Emitter Sustaining Voltage : BDW93 : BDW93A : BDW93B : BDW93C Collector Cut-off Current : BDW93 : BDW93A : BDW93B : BDW93C ICEO Collector Cut-off Current : BDW93 : BDW93A : BDW93B : BDW93C IEBO hFE Emitter Cut-off Current * DC Current Gain VCE = 45V, IB = 0 VCE = 60V, IB = 0 VCE = 80V, IB = 0 VCE = 100V, IB = 0 VEB = 5V, IC = 0 VCE = 3V, IC = 3A VCE = 3V, IC = 5A VCE = 3V, IC = 10A IC = 5A, IB = 2.
Multicomp
BDW93B
Part Number BDW93B
Manufacturer Multicomp
Title Darlington Transistors
Description Darlington Transistors BDW93, BDW94 Series Features: Designed for general-purpose amplifier and low speed switching applications • Collector-emitter sustaining voltage-VCEO (sus) = 80 V (Minimum) - BDW93B, BDW94B 100 V (Minimum) - BDW93C, BDW94C • Collector-emitter saturation voltage-VCE (sat) = 2 .
Features Designed for general-purpose amplifier and low speed switching applications
• Collector-emitter sustaining voltage-VCEO (sus) = 80 V (Minimum) - BDW93B, BDW94B 100 V (Minimum) - BDW93C, BDW94C
• Collector-emitter saturation voltage-VCE (sat) = 2 V (Maximum) at IC = 5 A
• Monolithic construction with built-in-base-emitter shunt resistor Dimension Minimum Maximum Pin : 1. Base 2. Collector 3. Emi.
Bourns Electronic Solutions
BDW93B
Part Number BDW93B
Manufacturer Bourns Electronic Solutions
Title NPN SILICON POWER DARLINGTONS
Description BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS ● ● ● ● Designed for Complementary Use with BDW94, BDW94A, BDW94B and BDW94C 80 W at 25°C Case Temperature 12 A Continuous Collector Current Minimum hFE of 750 at 3V, 5 A B C E TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical con.
Features 50°C free air temperature at the rate of 16 mW/°C. VEBO IC IB Ptot Ptot Tj Tstg TA VCEO V CBO SYMBOL VALUE 45 60 80 100 45 60 80 100 5 12 0.3 80 2 -65 to +150 -65 to +150 -65 to +150 V A A W W °C °C °C V V UNIT PRODUCT INFORMATION 1 SEPTEMBER 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS electrical.
INCHANGE
BDW93B
Part Number BDW93B
Manufacturer INCHANGE
Title NPN Transistor
Description ·Collector Current -IC= 12A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BDW93; 60V(Min)- BDW93A 80V(Min)- BDW93B; 100V(Min)- BDW93C ·Complement to Type BDW94/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for hammer.
Features W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BDW93/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDW93 CONDITIONS MIN TYP. MAX UNIT 45 VCEO(SUS) Collector-Emitter Sustaining Voltage BDW93A BDW93B IC= 50mA; IB= 0 60 80 V VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-1 ICBO ICEO IEBO hFE-1 h.

similar datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 BDW93
Fairchild Semiconductor
Hammer Drivers/ Audio Amplifiers Applications Datasheet
2 BDW93
SavantIC
Silicon NPN Power Transistors Datasheet
3 BDW93
Multicomp
Darlington Transistors Datasheet
4 BDW93
Bourns Electronic Solutions
NPN SILICON POWER DARLINGTONS Datasheet
5 BDW93
INCHANGE
NPN Transistor Datasheet
6 BDW93A
Fairchild Semiconductor
Hammer Drivers/ Audio Amplifiers Applications Datasheet
7 BDW93A
SavantIC
Silicon NPN Power Transistors Datasheet
8 BDW93A
Bourns Electronic Solutions
NPN SILICON POWER DARLINGTONS Datasheet
9 BDW93A
INCHANGE
NPN Transistor Datasheet
10 BDW93C
INCHANGE
NPN Transistor Datasheet
More datasheet from SavantIC
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad