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BDW93C |
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| Part Number | BDW93C |
| Manufacturer | INCHANGE |
| Description | ·With TO-220 packaging ·Very high DC current gain ·Monolithic darlington transistor with integrated antiparallel collector-emitter diode ·Complement to Type BDW94C ·Minimum Lot-to-Lot variations for r... |
| Features |
HANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
BDW93C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA, IB= 0
VCE(sat)1 Collector-Emitter Saturation Voltage IC= 5A ,IB= 20mA
VCE(sat)2 Collector-Emitter Saturation Voltage IC= 10A ,IB= 100mA
VBE(sat)1 Base-Emitter Saturation Voltage
IC= 5A ,IB= 20mA
VBE(sat)2 Base-Emitter Saturation Voltage
IC= 10A ,IB= 100mA
ICBO
Collector Cutoff Current
VCB=100V, IE= 0
ICEO
Collector Cutoff Current
VCE= 100V, IB= 0
IEBO
Emitter... |
| Document |
 BDW93C Data Sheet
PDF 187.62KB |
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Desde 2024. D4U Semiconductor.
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