Part Number | BDW83C |
Distributor | Stock | Price | Buy |
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Part Number | BDW83C |
Manufacturer | Bourns |
Title | NPN SILICON POWER DARLINGTONS |
Description | BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW84, BDW84A, BDW84B, BDW84C and BDW84D 150 W at 25°C Case Temperature 15 A Continuous Collector Current C B SOT-93 PACKAGE (TOP VIEW) 1 ● ● ● 2 Minimum hFE of 750 at 3V, 6 A E 3 Pin 2 is. |
Features | ) Operating junction temperature range Operating temperature range Operating free-air temperature range NOTES: 1. 2. 3. 4. 5 15 0.5 150 3.5 100 -65 to +150 -65 to +150 -65 to +150 V A A W W mJ °C °C °C These values apply when the base-emitter diode is open circuited. Derate linearly to 150°C case temperature at the rate of 1.2 W/°C. Derate linearly to 150°C free air temperature at the rate of 2. |
Part Number | BDW83C |
Manufacturer | INCHANGE |
Title | NPN Transistor |
Description | ·Collector Current -IC= 15A ·High DC Current Gain-hFE= 750(Min)@ IC= 6A ·Complement to Type BDW84C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications ABSOLUTE MAXIMUM RATINGS(. |
Features | rk isc Silicon NPN Darlington Power Transistor BDW83C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ;IB=0 100 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A; IB= 12mA 2.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 15A; IB= 150mA 4.0 V VBE(on) Base. |
Part Number | BDW83C |
Manufacturer | STMicroelectronics |
Title | NPN power Darlington transistor |
Description | te PThe BDW83C is an epitaxial-base NPN power lemonolithic Darlington transistor mounted in oTO-247 plastic package. It is intended for use in Obsolete Product(s) - Obspower linear and switching applications. 3 2 1 TO-247 Figure 1. Internal schematic diagram Table 1. Device summary Order code Ma. |
Features |
■ High current capability ■ Fast switching speed ■ High DC current gain t(s)Applications uc ■ Linear and switching industrial equipment rodDescription te PThe BDW83C is an epitaxial-base NPN power lemonolithic Darlington transistor mounted in oTO-247 plastic package. It is intended for use in Obsolete Product(s) - Obspower linear and switching applications. 3 2 1 TO-247 Figure 1. Internal schem. |
Part Number | BDW83C |
Manufacturer | Comset Semiconductors |
Title | NPN SILICON POWER DARLINGTONS |
Description | NPN BDW83, BDW83A, BDW83B, BDW83C, BDW83D, NPN SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial-base NPN power monolithic Darlington transistor mounted in Jedec TO-218 plastic package. They are intended for use in power linear and switching applications. The complementary are BDW84, . |
Features | Air Thermal Resistance 23/10/2012 COMSET SEMICONDUCTORS 1|3 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN BDW83, BDW83A, BDW83B, BDW83C, BDW83D, ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) BDW83 BDW83A IC=30 mA BDW83B IB=0 BDW83C BDW83D BDW83 IB=0, VCE=30 V IB=0, VCE=30 V BDW83A IB=0, VCE=40 V BDW83B IB=0, VCE=50 V BDW83C IB=0, VCE=60 V B. |
similar datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BDW83 |
SavantIC |
SILICON POWER TRANSISTOR | |
2 | BDW83 |
Bourns |
NPN SILICON POWER DARLINGTONS | |
3 | BDW83 |
Comset Semiconductors |
NPN SILICON POWER DARLINGTONS | |
4 | BDW83 |
INCHANGE |
NPN Transistor | |
5 | BDW83A |
SavantIC |
SILICON POWER TRANSISTOR | |
6 | BDW83A |
Bourns |
NPN SILICON POWER DARLINGTONS | |
7 | BDW83A |
Comset Semiconductors |
NPN SILICON POWER DARLINGTONS | |
8 | BDW83A |
INCHANGE |
NPN Transistor | |
9 | BDW83B |
SavantIC |
SILICON POWER TRANSISTOR | |
10 | BDW83B |
Bourns |
NPN SILICON POWER DARLINGTONS |