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BDW83C SILICON POWER TRANSISTOR


BDW83C
Part Number BDW83C
Distributor Stock Price Buy
Bourns
BDW83C
Part Number BDW83C
Manufacturer Bourns
Title NPN SILICON POWER DARLINGTONS
Description BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW84, BDW84A, BDW84B, BDW84C and BDW84D 150 W at 25°C Case Temperature 15 A Continuous Collector Current C B SOT-93 PACKAGE (TOP VIEW) 1 ● ● ● 2 Minimum hFE of 750 at 3V, 6 A E 3 Pin 2 is.
Features ) Operating junction temperature range Operating temperature range Operating free-air temperature range NOTES: 1. 2. 3. 4. 5 15 0.5 150 3.5 100 -65 to +150 -65 to +150 -65 to +150 V A A W W mJ °C °C °C These values apply when the base-emitter diode is open circuited. Derate linearly to 150°C case temperature at the rate of 1.2 W/°C. Derate linearly to 150°C free air temperature at the rate of 2.
INCHANGE
BDW83C
Part Number BDW83C
Manufacturer INCHANGE
Title NPN Transistor
Description ·Collector Current -IC= 15A ·High DC Current Gain-hFE= 750(Min)@ IC= 6A ·Complement to Type BDW84C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications ABSOLUTE MAXIMUM RATINGS(.
Features rk isc Silicon NPN Darlington Power Transistor BDW83C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ;IB=0 100 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A; IB= 12mA 2.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 15A; IB= 150mA 4.0 V VBE(on) Base.
STMicroelectronics
BDW83C
Part Number BDW83C
Manufacturer STMicroelectronics
Title NPN power Darlington transistor
Description te PThe BDW83C is an epitaxial-base NPN power lemonolithic Darlington transistor mounted in oTO-247 plastic package. It is intended for use in Obsolete Product(s) - Obspower linear and switching applications. 3 2 1 TO-247 Figure 1. Internal schematic diagram Table 1. Device summary Order code Ma.
Features
■ High current capability
■ Fast switching speed
■ High DC current gain t(s)Applications uc
■ Linear and switching industrial equipment rodDescription te PThe BDW83C is an epitaxial-base NPN power lemonolithic Darlington transistor mounted in oTO-247 plastic package. It is intended for use in Obsolete Product(s) - Obspower linear and switching applications. 3 2 1 TO-247 Figure 1. Internal schem.
Comset Semiconductors
BDW83C
Part Number BDW83C
Manufacturer Comset Semiconductors
Title NPN SILICON POWER DARLINGTONS
Description NPN BDW83, BDW83A, BDW83B, BDW83C, BDW83D, NPN SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial-base NPN power monolithic Darlington transistor mounted in Jedec TO-218 plastic package. They are intended for use in power linear and switching applications. The complementary are BDW84, .
Features Air Thermal Resistance 23/10/2012 COMSET SEMICONDUCTORS 1|3 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN BDW83, BDW83A, BDW83B, BDW83C, BDW83D, ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) BDW83 BDW83A IC=30 mA BDW83B IB=0 BDW83C BDW83D BDW83 IB=0, VCE=30 V IB=0, VCE=30 V BDW83A IB=0, VCE=40 V BDW83B IB=0, VCE=50 V BDW83C IB=0, VCE=60 V B.

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