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BDW83C |
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| Part Number | BDW83C |
| Manufacturer | INCHANGE |
| Description | ·Collector Current -IC= 15A ·High DC Current Gain-hFE= 750(Min)@ IC= 6A ·Complement to Type BDW84C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·De... |
| Features |
rk
isc Silicon NPN Darlington Power Transistor
BDW83C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ;IB=0
100
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A; IB= 12mA
2.5
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 15A; IB= 150mA
4.0
V
VBE(on) Base-Emitter On Voltage
IC= 6A ; VCE= 3V
2.5
V
ICEO
Collector Cutoff Current
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= 60V; IB= 0
VCB= 100V;IE= 0 VCB= 100V;IE= 0;TC= 150℃
VE... |
| Document |
 BDW83C Data Sheet
PDF 213.93KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BDW83 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 2 | BDW83 |
Bourns |
NPN SILICON POWER DARLINGTONS |
|
| 3 | BDW83 |
Comset Semiconductors |
NPN SILICON POWER DARLINGTONS |
|
| 4 | BDW83 |
INCHANGE |
NPN Transistor |
|
| 5 | BDW83A |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | BDW83A |
Bourns |
NPN SILICON POWER DARLINGTONS |
|
Desde 2024. D4U Semiconductor.
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