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| Part Number | BDW83B |
| Distributor | Stock | Price | Buy |
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| Part Number | BDW83B |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-3PN package www.datasheet4u.com ·Complement to type BDW84/84A/84B/84C/84D ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in power linear and switching applications. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BDW83/83A/83B/83C/83D Fig.1 simplif. |
| Features | rwise specified PARAMETER BDW83 BDW83A V(BR)CEO Collector-emitter breakdown voltage BDW83B BDW83C BDW83D VCEsat-1 VCEsat-2 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage BDW83 BDW83A ICBO Collector cut-off current BDW83B BDW83C BDW83D BDW83 BDW83A ICEO Collector cut-off current BDW83B BDW83C BDW83D IEBO hFE-1 hFE-2 VEC ton toff Emitter cut-off. |
| Part Number | BDW83B |
| Manufacturer | Bourns |
| Title | NPN SILICON POWER DARLINGTONS |
| Description | BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW84, BDW84A, BDW84B, BDW84C and BDW84D 150 W at 25°C Case Temperature 15 A Continuous Collector Current C B SOT-93 PACKAGE (TOP VIEW) 1 ● ● ● 2 Minimum hFE of 750 at 3V, 6 A E 3 Pin 2 is. |
| Features | ) Operating junction temperature range Operating temperature range Operating free-air temperature range NOTES: 1. 2. 3. 4. 5 15 0.5 150 3.5 100 -65 to +150 -65 to +150 -65 to +150 V A A W W mJ °C °C °C These values apply when the base-emitter diode is open circuited. Derate linearly to 150°C case temperature at the rate of 1.2 W/°C. Derate linearly to 150°C free air temperature at the rate of 2. |
| Part Number | BDW83B |
| Manufacturer | Comset Semiconductors |
| Title | NPN SILICON POWER DARLINGTONS |
| Description | NPN BDW83, BDW83A, BDW83B, BDW83C, BDW83D, NPN SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial-base NPN power monolithic Darlington transistor mounted in Jedec TO-218 plastic package. They are intended for use in power linear and switching applications. The complementary are BDW84, . |
| Features | Air Thermal Resistance 23/10/2012 COMSET SEMICONDUCTORS 1|3 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN BDW83, BDW83A, BDW83B, BDW83C, BDW83D, ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) BDW83 BDW83A IC=30 mA BDW83B IB=0 BDW83C BDW83D BDW83 IB=0, VCE=30 V IB=0, VCE=30 V BDW83A IB=0, VCE=40 V BDW83B IB=0, VCE=50 V BDW83C IB=0, VCE=60 V B. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BDW83 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 2 | BDW83 |
Bourns |
NPN SILICON POWER DARLINGTONS |
|
| 3 | BDW83 |
Comset Semiconductors |
NPN SILICON POWER DARLINGTONS |
|
| 4 | BDW83 |
INCHANGE |
NPN Transistor |
|
| 5 | BDW83A |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | BDW83A |
Bourns |
NPN SILICON POWER DARLINGTONS |
|
| 7 | BDW83A |
Comset Semiconductors |
NPN SILICON POWER DARLINGTONS |
|
| 8 | BDW83A |
INCHANGE |
NPN Transistor |
|
| 9 | BDW83C |
INCHANGE |
NPN Transistor |
|
| 10 | BDW83C |
STMicroelectronics |
NPN power Darlington transistor |
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Desde 2024. D4U Semiconductor.
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