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| Part Number | BDW53 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BDW53 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High DC Current Gain : hFE= 750(Min.)@ IC= 1.5A, VCE= 3V ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min) ·Low Collector Saturation Voltage ·Complement to Type BDW54 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for gener. |
| Features | Ambient 62.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS INCHANGE Semiconductor BDW53 MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA, IB= 0 45 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1.5A ,. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BDW51 |
INCHANGE |
NPN Transistor |
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| 2 | BDW51A |
Seme LAB |
Bipolar NPN Device |
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| 3 | BDW51A |
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NPN Transistor |
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| 4 | BDW51B |
Seme LAB |
Bipolar NPN Device |
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| 5 | BDW51B |
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NPN Transistor |
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| 6 | BDW51C |
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Bipolar NPN Device |
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| 7 | BDW51C |
SavantIC |
SILICON POWER TRANSISTOR |
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| 8 | BDW51C |
INCHANGE |
NPN Transistor |
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| 9 | BDW52 |
Seme LAB |
Bipolar PNP Device |
|
| 10 | BDW52 |
INCHANGE |
Silicon PNP Power Transistor |
|
Desde 2024. D4U Semiconductor.
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