BDW51A Datasheet. existencias, precio

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BDW51A Bipolar NPN Device


BDW51A
Part Number BDW51A
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INCHANGE
BDW51A
Part Number BDW51A
Manufacturer INCHANGE
Title NPN Transistor
Description ·Collector Current -IC= 15A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BDW51; 60V(Min)- BDW51A 80V(Min)- BDW51B; 100V(Min)- BDW51C ·Complement to Type BDW52/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in.
Features ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BDW51/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDW51 CONDITIONS MIN TYP. MAX UNIT 45 VCEO(SUS) Collector-Emitter Sustaining Voltage BDW51A BDW51B IC= 30mA; IB= 0 60 80 V BDW51C 100 VCE(sat)-1 Collector-Emitter Saturation Voltage IC=.

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