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BDW53 |
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| Part Number | BDW53 |
| Manufacturer | INCHANGE |
| Description | ·High DC Current Gain : hFE= 750(Min.)@ IC= 1.5A, VCE= 3V ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min) ·Low Collector Saturation Voltage ·Complement to Type BDW54 ·Minimum Lot-to-L... |
| Features |
Ambient 62.5 ℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
INCHANGE Semiconductor
BDW53
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA, IB= 0
45
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1.5A ,IB= 30mA
2.5
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A ,IB= 40mA
4.0
V
VBE(on) Base-Emitter On Voltage
IC= 1.5A ; VCE= 3V
2.5
V
ICBO
Collector Cutoff current
VCB= 45V, IE= 0... |
| Document |
 BDW53 Data Sheet
PDF 198.28KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
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