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| Part Number | BD440 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BD440 |
| Manufacturer | Fairchild Semiconductor |
| Title | PNP Epitaxial Silicon Transistor |
| Description | BD440/442 BD440/442 Medium Power Linear and Switching Applications • Complement to BD439, BD441 respectively PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BD440 : BD442 VCES Collector-Emitter Voltage : BD440 . |
| Features | st Condition IC = - 100mA, IB = 0 VCB = - 60V, IE = 0 VCB = - 80V, IE = 0 VCE = - 60V, VBE = 0 VCE = - 80V, VBE = 0 VEB = - 5V, IC = 0 VCE = - 5V, IC = - 10mA VCE = - 1V, IC = - 500mA VCE = - 1V, IC = - 2A IC = - 2A, IB = - 0.2A VCE = - 5V, IC = - 10mA VCE = -1 V, IC = - 2A VCE = - 1V, IC = - 250mA 3 -0.58 - 1.5 20 15 40 40 25 15 140 140 140 140 Min. -60 -80 - 100 - 100 - 100 - 100 -1 Typ. Max. Un. |
| Part Number | BD440 |
| Manufacturer | CDIL |
| Title | EPITAXIAL SILICON POWER TRANSISTORS |
| Description | SYMBOL Collector Base Voltage VCBO Collector Emitter Voltage VCES Collector Emitter Voltage VCEO Emitter Base Voltage VEBO Collector Current IC Collector Peak Current (t=10ms_ ICM Base Current IB Total Dissipation @ TC=25ºC PD Total Dissipation @ Ta=25ºC Derate above 25ºC PD Opera. |
| Features | ERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION BD433 BD435 BD437 BD439 BD441 Collector Cut off Current Collector Cut off Current Emitter Cut off Current Collector Emitter Sustaining Voltage BD434 BD436 BD438 BD440 BD442 ICBO VCB=Rated VCBO, IE=0 <100 <100 <100 <100 <100 ICES VBE=0, VCE=Rated VCES <100 <100 <100 <100 <100 IEBO VEB=5V, IC=0 <1.0 <1.0 <1.0 <1. |
| Part Number | BD440 |
| Manufacturer | JCET |
| Title | PNP Transistor |
| Description | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD438,440,442 TRANSISTOR (PNP) FEATURES Amplifier and Switching Applications TO-126 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage BD438 BD440 . |
| Features |
Amplifier and Switching Applications
TO-126
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
BD438 BD440
-45 -60
V
BD442
-80
VCEO
Collector-Emitter Voltage BD438 BD440
-45 -60
V
BD442
-80
VEBO IC PC TJ Tstg
Emitter-Base Voltage Collector Current –Continuous Collector Power Dissipation Junction Temperature Storage Temperatu. |
| Part Number | BD440 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= -60V(Min) ·Complement to type BD439 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER. |
| Features | Voltage IC= -30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A VBE(on) Base-Emitter On Voltage IC= -2A; VCE= -1V ICBO Collector Cutoff Current VCB= -60V; IE= 0 ICEO Collector Cutoff Current VCE= -60V; VBE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -10mA; VCE= -5V hFE-2 DC Current Gain IC= -0.5A; VCE= -1V hFE-3 DC Current. |
| Part Number | BD440 |
| Manufacturer | STMicroelectronics |
| Title | COMPLEMENTARY SILICON POWER TRANSISTORS |
| Description | The BD439 and BD441 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in power linear and switching applications. The complementary PNP types are BD440, and BD442 respectively. SOT-32 3 2 1 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb. |
| Features | BD441/BD442 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 3.5 100 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I CES I EBO Parameter Collector Cut-off Current (I E = 0) Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Conditions for BD439/440 for BD441/442. |
| Part Number | BD440 |
| Manufacturer | ON Semiconductor |
| Title | PNP Transistor |
| Description | BD436, BD438, BD440, BD442 Plastic Medium Power Silicon PNP Transistor This series of plastic, medium−power silicon PNP transistors can be used for for amplifier and switching applications. Complementary types are BD437 and BD441. Features • Pb−Free Packages are Available* http://onsemi.com 4.0 AMP. |
| Features |
• Pb−Free Packages are Available* http://onsemi.com 4.0 AMP POWER TRANSISTORS PNP SILICON ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating Symbol Value Unit Collector−Emitter Voltage BD436 BD438 BD440 BD442 VCEO 32 45 60 80 Vdc Collector−Base Voltage BD436 BD438 BD440 BD442 VCBO 32 45 60 80 Vdc Emitter−Base Voltage VEBO 5.0 Vdc Collector Current IC 4.0 Adc Base Cu. |
| Part Number | BD440 |
| Manufacturer | Comset Semiconductors |
| Title | Silicon PNP Power Transistors |
| Description | BD440 – BD442 SILICON PNP POWER TRANSISTORS. The BD440-BD442 are PNP Transistors mounted in Jedec TO-126 plastic package. They are recommended for use in medium power linear and switching applications. NPN complements are BD439-BD441. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VE. |
| Features | otherwise noted Symbol ICBO ICES IEBO VCEO(SUS) VCE(SAT) Ratings Collector cut-off current Collector cut-off current Emitter cut-offcurrent Collector-Emitter sustaning Voltage (*) Collector-Emitter saturation Voltage (*) Base-Emitter Voltage(*) Test Condition(s) IE= 0, VCB= -60 V IE= 0, VCB= -80 V VBE= 0, VCE= -60 V VBE= 0, VCE= -80 V IC= 0 VEB= -5 V IB= 0 IC= -100 mA IC= -2 A IB= -200 mA IC= -. |
| Part Number | BD440 |
| Manufacturer | Central Semiconductor |
| Title | COMPLEMENTARY SILICON POWER TRANSISTORS |
| Description | The CENTRAL SEMICONDUCTOR BD439, BD440 series types are Complementary Silicon Power Transistors, manufactured by the epitaxial base process, designed for medium power, low speed switching applications. MARKING: FULL PART NUMBER TO-126 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collec. |
| Features | BE(ON) IC=2.0A, IB=200mA VCE=1.0V, IC=2.0A hFE VCE=5.0V, IC=10mA (BD439, BD440) hFE VCE=5.0V, IC=10mA (BD441, BD442) hFE VCE=1.0V, IC=500mA hFE VCE=1.0V, IC=2.0A (BD439, BD440) hFE VCE=1.0V, IC=2.0A (BD441, BD442) fT VCE=1.0V, IC=250mA MIN 60 80 20 15 40 25 15 3.0 MAX 100 100 1.0 0.8 1.5 UNITS V V V V A A A W °C °C/W °C/W UNITS μA μA mA V V V V MHz R1 (2-February 2009) CentralTM Semicondu. |
| Part Number | BD440 |
| Manufacturer | SeCoS |
| Title | Plastic Encapsulate Transistors |
| Description | Elektronische Bauelemente BD438/BD440/BD442 PNP Type Plastic Encapsulate Transistors Features RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free * Amplifier and switching applications MAXIMUM RATINGS* TA=25oC unless otherwise noted Symbol Parameter Value Units VCBO VCEO . |
| Features |
RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free
* Amplifier and switching applications
MAXIMUM RATINGS* TA=25oC unless otherwise noted
Symbol
Parameter
Value
Units
VCBO VCEO
Collector-Base Voltage Collector-Emitter Voltage
BD438 BD440 BD442 BD438 BD440 BD442
-45 -60 -80 -45 -60 -80
V V
VEBO IC PC TJ Tstg
Emitter-Base Voltage Collector Current –Continuous Collect. |
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