Part Number | BD441 |
Distributor | Stock | Price | Buy |
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Part Number | BD441 |
Manufacturer | LGE |
Title | NPN Transistor |
Description | BD439/441(NPN) TO-126 Transistor 1. EMITTER 2. COLLECTOR Features 3 2 1 Amplifier and switching applications 3. BASE MAXIMUM RATINGS(TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage BD439 BD441 60 80 V VCEO Collector-Emitter Voltage BD439 BD. |
Features |
3 2
1
Amplifier and switching applications
3. BASE
MAXIMUM RATINGS(TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
BD439 BD441
60 80
V
VCEO
Collector-Emitter Voltage BD439 BD441
60 80
V
VEBO
Emitter-Base Voltage
5V
IC Collector Current –Continuous 4A PC Collector Power Dissipation 1.25 W TJ Junction Temperature 150 ℃ Tstg Storage. |
Part Number | BD441 |
Manufacturer | BLUE ROCKET ELECTRONICS |
Title | Silicon NPN transistor |
Description | TO-126F NPN 。Silicon NPN transistor in a TO-126F Plastic Package. / Features BD442 。 Complementary pair with BD442. / Applications 。 Medium power linear and switching applications. / Equivalent Circuit / Pinning 12 3 PIN1:Emitter PIN 2:Collector PIN 3:Base / hFE Classification. |
Features | BD442 。 Complementary pair with BD442. / Applications 。 Medium power linear and switching applications. / Equivalent Circuit / Pinning 12 3 PIN1:Emitter PIN 2:Collector PIN 3:Base / hFE Classifications & Marking 。See Marking Instructions http://www.fsbrec.com 1/6 BD441 Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter. |
Part Number | BD441 |
Manufacturer | STMicroelectronics |
Title | NPN power transistor |
Description | This device is manufactured in planar technology with “base island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP type is BD442. 1 2 3 SOT-32 Figure 1. Internal schematic diagram Table 1. Device summary Order code BD441 . |
Features |
■ NPN transistor Applications ■ Linear and switching industrial equipment Description This device is manufactured in planar technology with “base island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP type is BD442. 1 2 3 SOT-32 Figure 1. Internal schematic diagram Table 1. Device summary Order code BD441 Marking BD441 . |
Part Number | BD441 |
Manufacturer | Multicomp |
Title | Bipolar Transistor |
Description | This TO-126 plastic silicon epitaxial base NPN power transistor intended for use in power linear and switching applications. Collector 3 2 Base 1 Emitter Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Continuous Collector Current Total Dev. |
Features | . |
Part Number | BD441 |
Manufacturer | TRANSYS Electronics |
Title | POWER TRANSISTORS |
Description | SYMBOL Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Total Dissipation @ TC=25ºC Total Dissipation @ Ta=25ºC Derate above 25ºC Operating and Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case Junctio. |
Features | SCRIPTION SYMBOL BD433 BD435 BD437 BD439 BD441 BD434 BD436 BD438 BD440 BD442 VCB=Rated VCBO, IE=0 ICBO Collector Cut off Current <100 <100 <100 <100 <100 Collector Cut off Current Emitter Cut off Current Collector Emitter Sustaining Voltage Collector Emitter Saturation Voltage Base Emitter On Voltage ICES IEBO *VCEO (sus) *VCE (sat) VBE=0, VCE=Rated VCES VEB=5V, IC=0 IC=100mA, IB=0 IC=2.0A, IB=0.2. |
Part Number | BD441 |
Manufacturer | SeCoS |
Title | Plastic Encapsulate Transistors |
Description | BD439/BD441 Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free NPN Type Plastic Encapsulate Transistors TO-126 8.0±0.2 2.0±0.2 4.14±0.1 11.0±0.2 1 2 3 O2.8±0.1 O3.2±0.1 Features * Amplifier and switching applications 3.2±0.2 1.4±0.1 o MAXIMUM RATINGS. |
Features |
* Amplifier and switching applications
3.2±0.2
1.4±0.1
o MAXIMUM RATINGS* TA=25 C unless otherwise noted
1.27±0.1 15.3±0.2 0.76±0.1 2.28 Typ.
Symbol VCBO
Paramete Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current –Continuous Collector Dissipation Junction Temperature Storage Temperature BD439 BD441 BD439 BD441 Value 60 80 60 80 5 4 1.25 150 -55-150 Unit. |
Part Number | BD441 |
Manufacturer | ON Semiconductor |
Title | Plastic Medium Power Silicon NPN Transistor |
Description | BD435, BD437, BD439, BD441 Plastic Medium Power Silicon NPN Transistor This series of plastic, medium−power silicon NPN transistors can be used for amplifier and switching applications. Complementary types are BD438 and BD442. Features http://onsemi.com • Pb−Free Package is Available* 4.0 AMPERES . |
Features |
http://onsemi.com
• Pb−Free Package is Available* 4.0 AMPERES POWER TRANSISTORS NPN SILICON ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎ. |
Part Number | BD441 |
Manufacturer | Comset Semiconductors |
Title | Silicon NPN Power Transistors |
Description | BD439 – BD441 SILICON NPN POWER TRANSISTORS. The BD439-BD441 are NPN Transistors mounted in Jedec TO-126 plastic package. They are recommended for use in medium power linear and switching applications. PNP complements are BD440-BD442. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VE. |
Features | e noted Symbol ICBO ICES IEBO VCEO(SUS) VCE(SAT) Ratings Collector cut-off current Collector cut-off current Emitter cut-offcurrent Collector-Emitter sustaning Voltage (*) Collector-Emitter saturation Voltage (*) Base-Emitter Voltage(*) Test Condition(s) IE= 0, VCB= 60 V IE= 0, VCB= 80 V VBE= 0, VCE= 60 V VBE= 0, VCE= 80 V IC= 0 VEB= 5 V IB= 0 IC= 100 mA IC= 2 A IB= 200 mA IC= 10 mA VCE= 5 V IC. |
Part Number | BD441 |
Manufacturer | Central Semiconductor |
Title | COMPLEMENTARY SILICON POWER TRANSISTORS |
Description | The CENTRAL SEMICONDUCTOR BD439, BD440 series types are Complementary Silicon Power Transistors, manufactured by the epitaxial base process, designed for medium power, low speed switching applications. MARKING: FULL PART NUMBER TO-126 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collec. |
Features | BE(ON) IC=2.0A, IB=200mA VCE=1.0V, IC=2.0A hFE VCE=5.0V, IC=10mA (BD439, BD440) hFE VCE=5.0V, IC=10mA (BD441, BD442) hFE VCE=1.0V, IC=500mA hFE VCE=1.0V, IC=2.0A (BD439, BD440) hFE VCE=1.0V, IC=2.0A (BD441, BD442) fT VCE=1.0V, IC=250mA MIN 60 80 20 15 40 25 15 3.0 MAX 100 100 1.0 0.8 1.5 UNITS V V V V A A A W °C °C/W °C/W UNITS μA μA mA V V V V MHz R1 (2-February 2009) CentralTM Semicondu. |
similar datasheet
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1 | BD440 |
Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor | |
2 | BD440 |
STMicroelectronics |
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3 | BD440 |
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4 | BD440 |
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5 | BD440 |
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8 | BD440 |
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9 | BD440 |
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