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| Part Number | BD241A |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BD241A |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·DC Current Gain -hFE = 25(Min)@ IC= 1.0A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BD241; 60V(Min)- BD241A 80V(Min)- BD241B; 100V(Min)- BD241C ·Complement to Type BD242/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Desig. |
| Features | Resistance, Junction to Case 3.125 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD241/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT BD241 45 VCEO(SUS) Collector-Emitter Sustaining Voltage BD241A BD241B IC= 30mA ;IB= 0 60 V 80 BD241C 100 VCE(sat) Collector-Em. |
| Part Number | BD241A |
| Manufacturer | Comset Semiconductor |
| Title | NPN transistors |
| Description | NPN BD241 – A – B – C MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS. The BD241, A, B, C are the NPN transistors mounted in Jedec TO-220 plastic package. They are the silicon epitaxial-base Power Transistors for use in medium power linear and switching applications. The PNP complements are BD242, A. |
| Features | . |
| Part Number | BD241A |
| Manufacturer | SavantIC |
| Title | Silicon NPN Power Transistors |
| Description | ·With TO-220C package ·Complement to type BD242/A/B/C APPLICATIONS ·For medium power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS BD241 VCBO Collector-base vol. |
| Features | ning voltage BD241A BD241B IC=30mA; IB=0 BD241C VCEsat VBE ICEO ICES IEBO hFE-1 hFE-2 Collector-emitter saturation voltage IC=3A;IB=0.6 A Base-emitter on voltage IC=3A ; VCE=4V Collector cut-off current BD241/A VCE=30V; IB=0 BD241B/C VCE=60V; IB=0 BD241 VCE=45V; VBE=0 Collector cut-off current BD241A BD241B VCE=60V; VBE=0 VCE=80V; VBE=0 BD241C VCE=100V; VBE=0 Emitter cut-off curr. |
| Part Number | BD241A |
| Manufacturer | RECTRON |
| Title | Power Transistors |
| Description | RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION See Below for Part # TO-220 - Power Transistors and Darlingtons TO-220 4 12 3 Pin Config 1. Base 2. Collector 3. Emitter 4. Collector Dimensions in millimeters Electrical Characteristics (Ta=25oC) Part # Polarity VCBO VCEO VEBO (V) (V) (V) Min Mi. |
| Features | . |
| Part Number | BD241A |
| Manufacturer | Bourns |
| Title | NPN SILICON POWER TRANSISTORS |
| Description | BD241, BD241A, BD241B, BD241C NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD242 Series ● 40 W at 25°C Case Temperature ● 3 A Continuous Collector Current ● 5 A Peak Collector Current ● Customer-Specified Selections Available TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 . |
| Features | 241C BD241 BD241A BD241B BD241C VCER VCEO VEBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL 55 70 V 90 115 45 60 V 80 100 5 V 3 A 5 A 1 A 40 W 2 W 32 mJ -65 to +150 °C -65 to +150 °C 250 °C NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. 2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C. 3. Derate linearly to 150°C free air temperature at the. |
| Part Number | BD241A |
| Manufacturer | Fairchild Semiconductor |
| Title | NPN Epitaxial Silicon Transistor |
| Description | BD241/A/B/C BD241/A/B/C Medium Power Linear and Switching Applications • Complement to BD242/A/B/C respectively TO-220 2.Collector 3.Emitter 1 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO Parameter Collector-Emitter Voltage : BD241 :. |
| Features | 3 0.2 0.2 0.2 0.2 1 25 10 1.2 1.8 V V Typ. Max. Units V V V V mA mA mA mA mA mA mA ICEO ICES VCE = 30V, IB = 0 VCE = 60V, IB = 0 VCE = 45V, VBE = 0 VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VCE = 100V, VBE = 0 VEB = 5V, IC = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 3A IC = 3A, IB = 0.6A VCE = 4V, IC = 3A IEBO hFE VCE(sat) VBE(on) Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation V. |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BD241 |
INCHANGE |
NPN Transistor |
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| 2 | BD241 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
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| 3 | BD241 |
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| 4 | BD241 |
Comset Semiconductor |
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| 5 | BD241 |
SavantIC |
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| 6 | BD241B |
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| 7 | BD241B |
Motorola Inc |
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| 8 | BD241B |
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| 9 | BD241B |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
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| 10 | BD241B |
ON Semiconductor |
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Desde 2024. D4U Semiconductor.
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