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BD241A |
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| Part Number | BD241A |
| Manufacturer | INCHANGE |
| Description | ·DC Current Gain -hFE = 25(Min)@ IC= 1.0A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BD241; 60V(Min)- BD241A 80V(Min)- BD241B; 100V(Min)- BD241C ·Complement to Type BD242/A/B/C ·Mi... |
| Features |
Resistance, Junction to Case 3.125 ℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
BD241/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN MAX UNIT
BD241
45
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BD241A BD241B
IC= 30mA ;IB= 0
60 V
80
BD241C
100
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A
1.2
V
VBE(on) Base-Emitter On Voltage
IC= 3A ; VCE= 4V
1.8
V
BD241
VCE= 45V; VBE= 0
ICES
Collector Cutoff Current
BD241A BD241B
VCE= 60V; VBE= 0 V... |
| Document |
 BD241A Data Sheet
PDF 207.69KB |
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Desde 2024. D4U Semiconductor.
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