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| Part Number | BD241B |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BD241B |
| Manufacturer | Comset Semiconductor |
| Title | NPN transistors |
| Description | NPN BD241 – A – B – C MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS. The BD241, A, B, C are the NPN transistors mounted in Jedec TO-220 plastic package. They are the silicon epitaxial-base Power Transistors for use in medium power linear and switching applications. The PNP complements are BD242, A. |
| Features | . |
| Part Number | BD241B |
| Manufacturer | Motorola Inc |
| Title | Complementary Silicon Plastic Power Transistors |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD241B/D Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. • Collector–Emitter Saturation Voltage — VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc • Collector–Emitter Sus. |
| Features | ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ Rating . |
| Part Number | BD241B |
| Manufacturer | Fairchild Semiconductor |
| Title | NPN Epitaxial Silicon Transistor |
| Description | BD241/A/B/C BD241/A/B/C Medium Power Linear and Switching Applications • Complement to BD242/A/B/C respectively TO-220 2.Collector 3.Emitter 1 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO Parameter Collector-Emitter Voltage : BD241 :. |
| Features | 3 0.2 0.2 0.2 0.2 1 25 10 1.2 1.8 V V Typ. Max. Units V V V V mA mA mA mA mA mA mA ICEO ICES VCE = 30V, IB = 0 VCE = 60V, IB = 0 VCE = 45V, VBE = 0 VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VCE = 100V, VBE = 0 VEB = 5V, IC = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 3A IC = 3A, IB = 0.6A VCE = 4V, IC = 3A IEBO hFE VCE(sat) VBE(on) Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation V. |
| Part Number | BD241B |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·DC Current Gain -hFE = 25(Min)@ IC= 1.0A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BD241; 60V(Min)- BD241A 80V(Min)- BD241B; 100V(Min)- BD241C ·Complement to Type BD242/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Desig. |
| Features | Resistance, Junction to Case 3.125 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD241/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT BD241 45 VCEO(SUS) Collector-Emitter Sustaining Voltage BD241A BD241B IC= 30mA ;IB= 0 60 V 80 BD241C 100 VCE(sat) Collector-Em. |
| Part Number | BD241B |
| Manufacturer | ON Semiconductor |
| Title | POWER TRANSISTORS COMPLEMENTARY SILICON |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD241C/D Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. • Collector–Emitter Saturation Voltage — VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc • Collector–Emitter Sus. |
| Features |
ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ
Rating Symbol VCEO VCES VEB IC IB BD242B 80 90 BD241C BD242C 100 115 Unit Vdc Vdc Vdc Adc Adc Adc Collector –Emitter Voltage Collector –Emitter Voltage Emitter –Base Voltage 5.0 3.0 5.0 1.0 Collector Current — Cont. |
| Part Number | BD241B |
| Manufacturer | Bourns |
| Title | NPN SILICON POWER TRANSISTORS |
| Description | BD241, BD241A, BD241B, BD241C NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD242 Series ● 40 W at 25°C Case Temperature ● 3 A Continuous Collector Current ● 5 A Peak Collector Current ● Customer-Specified Selections Available TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 . |
| Features | 241C BD241 BD241A BD241B BD241C VCER VCEO VEBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL 55 70 V 90 115 45 60 V 80 100 5 V 3 A 5 A 1 A 40 W 2 W 32 mJ -65 to +150 °C -65 to +150 °C 250 °C NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. 2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C. 3. Derate linearly to 150°C free air temperature at the. |
| Part Number | BD241B |
| Manufacturer | SavantIC |
| Title | Silicon NPN Power Transistors |
| Description | ·With TO-220C package ·Complement to type BD242/A/B/C APPLICATIONS ·For medium power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS BD241 VCBO Collector-base vol. |
| Features | ning voltage BD241A BD241B IC=30mA; IB=0 BD241C VCEsat VBE ICEO ICES IEBO hFE-1 hFE-2 Collector-emitter saturation voltage IC=3A;IB=0.6 A Base-emitter on voltage IC=3A ; VCE=4V Collector cut-off current BD241/A VCE=30V; IB=0 BD241B/C VCE=60V; IB=0 BD241 VCE=45V; VBE=0 Collector cut-off current BD241A BD241B VCE=60V; VBE=0 VCE=80V; VBE=0 BD241C VCE=100V; VBE=0 Emitter cut-off curr. |
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|---|---|---|---|---|
| 1 | BD241 |
INCHANGE |
NPN Transistor |
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| 2 | BD241 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
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| 3 | BD241 |
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| 4 | BD241 |
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| 5 | BD241 |
SavantIC |
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| 6 | BD241A |
INCHANGE |
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| 7 | BD241A |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
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| 8 | BD241A |
STMicroelectronics |
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| 9 | BD241A |
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| 10 | BD241A |
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Desde 2024. D4U Semiconductor.
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