BCX70G Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

BCX70G NPN EPITAXIAL SILICON TRANSISTOR


BCX70G
Part Number BCX70G
Distributor Stock Price Buy
MCC
BCX70G
Part Number BCX70G
Manufacturer MCC
Title NPN Transistor
Description MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features Ideally Suited for Automatic Insertion 150oC Junction Temperature Low Current, Low Voltage For Switching and AF Amplifier applications. S.
Features Ideally Suited for Automatic Insertion 150oC Junction Temperature Low Current, Low Voltage For Switching and AF Amplifier applications. Suited for low level, low noise, low frequency Applications in hybrid circuits Mechanical Data x Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1 Terminals: Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams ( a.
CDIL
BCX70G
Part Number BCX70G
Manufacturer CDIL
Title SILICON PLANAR EPITAXIAL TRANSISTORS
Description Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCX70G BCX70H BCX70J BCX70K SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N silicon transistors Marking BCX70G = AG BCX70H = AH BCX70J = AJ BCX70K = AK PACKAGE OUTLINE DETAILS ALL DIME.
Features V 45 V 5V Continental Device India Limited Data Sheet Page 1 of 3 BCX70G BCX70H BCX70J BCX70K Collector current (d.c.) Base current Total power dissipation up to Tamb = 25 °C Storage temperature Junction temperature IC max. 200 mA lB max. 50 mA Ptot max. 250 mW Tstg
  –55 to +150 °C Tj max. 150 ° C THERMAL RESISTANCE From junction to ambient Rth j
  –a = 500 K/W CHARACTERISTICS Tamb: 25 °C un.
Fairchild Semiconductor
BCX70G
Part Number BCX70G
Manufacturer Fairchild Semiconductor
Title NPN EPITAXIAL SILICON TRANSISTOR
Description BCX70G GENERAL PURPOSE TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (TA=25° C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature • Refer to KS5088 for graphs Symbol VCBO V.
Features , IB=0.25mA IC=50mA, IB=1.25mA IC=2mA, VCE=5V VCE=5V, IC=10mA VCB=10V, IE=0 f=1MHz IC=0.2mA, VCE=5V f=1KHz, RS=2KΩ IC=10mA, IB1=1mA IB2=1mA, VBB=3.6V RL=990Ω R1=R2=5KΩ Min 45 5 20 20 220 0.35 0.55 0.85 1.05 0.75 Max Unit V V nA nA 120 60 0.6 0.7 0.55 125 V V V V V MHz pF dB ns ns 4.5 6 150 800 Rev. B © 1999 Fairchild Semiconductor Corporation TRADEMARKS The following are registered and unre.
NXP
BCX70G
Part Number BCX70G
Manufacturer NXP
Title NPN general purpose transistors
Description NPN transistor in a SOT23 plastic package. PNP complements: BCX71 series. MARKING TYPE NUMBER BCX70G BCX70H BCX70J BCX70K Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. Fig.1 MARKING CODE(1) AG∗ AH∗ AJ∗ AK∗ Top view handbook, halfpage BCX70 series PINNING PIN 1 2 3 base emitter collec.
Features
• Low current (max. 100 mA)
• Low voltage (max. 45 V). APPLICATIONS
• General purpose switching and amplification. DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complements: BCX71 series. MARKING TYPE NUMBER BCX70G BCX70H BCX70J BCX70K Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. Fig.1 MARKING CODE(1) AG∗ AH∗ AJ∗ AK∗ Top view handbook, halfpage BCX70 series PINNING PI.
Siemens Semiconductor Group
BCX70G
Part Number BCX70G
Manufacturer Siemens Semiconductor Group
Title NPN Silicon AF Transistors
Description NPN Silicon AF Transistors BCW 60 BCX 70 q q q q q For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW 61, BCX 71 (PNP) Type BCW 60 A BCW 60 B BCW 60 C BCW 60 D BCW 60 FF BCW 60 FN BCX .
Features t Rth JA Rth JS ≤ ≤ Symbol BCW 60 VCE0 VCB0 VEB0 IC ICM IBM Ptot Tj Tstg 32 32 Values BCW 60 FF BCX 70 32 32 5 100 200 200 330 150
  – 65 … + 150 45 45 Unit V mA mW ˚C 310 240 K/W 1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 2 BCW 60 BCX 70 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristi.
General Semiconductor
BCX70G
Part Number BCX70G
Manufacturer General Semiconductor
Title NPN Transistor
Description BCX70 Series Small Signal Transistor (NPN) TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) 3 .056 (1.43) .052 (1.33) Top View P w Ne c u d ro t Mounting Pad Layout 0.037 (0.95) 0.037 (0.95) 1 2 max. .004 (0.1) Pin Configuration 1 = Base 2 = Emitter 3 = Collector .007 (0.175) .005 (0.125).
Features
• NPN Silicon Epitaxial Planar Transistors for switching and AF amplifier applications.
• Suited for low level, low noise, low frequency applications in hybrid circuits.
• Low current, low voltage.
• As complementary types, BCX71 Series PNP transistors are recommended. Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Parameter Collector-Bas.
Infineon Technologies AG
BCX70G
Part Number BCX70G
Manufacturer Infineon Technologies AG
Title NPN Silicon AF Transistors
Description BCW60, BCX70 NPN Silicon AF Transistors  For AF input stages and driver applications  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz Complementary types: BCW61, BCX71 (PNP) 3 2 1 VPS05161 Type BCW60A BCW60B BCW60C BCW60D BCW60FF BCW60FN BCX7.
Features l Resistance Junction - soldering point 1) RthJS 240 K/W Unit max. V Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 1 µA, IC = 0 1For calculation of R thJA please refer to Application.
Kexin
BCX70G
Part Number BCX70G
Manufacturer Kexin
Title NPN Transistors
Description SMD Type NPN Transistors BCX70 (KCX70) Transistors ■ Features ● Low current (max. 100 mA) ● Low voltage (max. 45 V). ● PNP complements: BCX71 series. +0.22.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.21.1 -0.1 +0.21.6 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0..
Features
● Low current (max. 100 mA)
● Low voltage (max. 45 V).
● PNP complements: BCX71 series. +0.22.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.21.1 -0.1 +0.21.6 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1. Base 2. Emitter 3. Collector 0-0.1 +0.10.68 -0.1
■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter .
Zetex Semiconductors
BCX70G
Part Number BCX70G
Manufacturer Zetex Semiconductors
Title NPN Transistor
Description SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR ISSUE 2 – FEBRUARY 95 PARTMARKING DETAIL – COMPLEMENTARY TYPE – BCX70G – AG BCX70H – AH BCX70J – AJ BCX70K – AK BCX70GR – AW BCX70HR – 9P BCX70JR – AX BCX70KR – P9 BCX71 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Emitter Voltage Coll.
Features .

similar datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 BCX70
GME
Silicon Transistor Datasheet
2 BCX70
NXP
NPN general purpose transistors Datasheet
3 BCX70
General Semiconductor
NPN Transistor Datasheet
4 BCX70
Infineon Technologies AG
NPN Silicon AF Transistors Datasheet
5 BCX70
Multicomp
Silicon Epitaxial Planar Transistor Datasheet
6 BCX70
UTC
GENERAL PURPOSE TRANSISTOR Datasheet
7 BCX70
Central Semiconductor
SILICON NPN TRANSISTORS Datasheet
8 BCX70
Kexin
NPN Transistors Datasheet
9 BCX70
Zetex Semiconductors
NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR Datasheet
10 BCX70G
Motorola
Transistor Datasheet
More datasheet from Samsung semiconductor
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad