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BCX70G |
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| Part Number | BCX70G |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
| Description | BCW60, BCX70 NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementa... |
| Features |
l Resistance Junction - soldering point 1) RthJS
240
K/W
Unit max. V
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 1 µA, IC = 0
1For calculation of R thJA please refer to Application Note Thermal Resistance
typ.
V(BR)CEO 32 45 V(BR)CBO 32 45 V(BR)EBO 5 -
BCW60/60FF BCX70
BCW60/60FF BCX70
2
Jan-29-2002
BCW60, BCX70
Electrical Characteristics at TA = 25°C, unless otherwise ... |
| Document |
 BCX70G Data Sheet
PDF 228.34KB |
Similar Datasheet
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