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| Part Number | BCW66 |
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| Part Number | BCW66 |
| Manufacturer | Galaxy Electrical |
| Title | NPN General Purpose Amplifier |
| Description | BL Galaxy Electrical NPN General Purpose Amplifier FEATURES z For general AF appilications. z High current gain. Pb Lead-free z Low collector-emitter saturation voltage. z Complementary types:BCW67,BCW68(PNP) APPLICATIONS z General purpose medium power amplifier. z Switching appilication. Pro. |
| Features | z For general AF appilications. z High current gain. Pb Lead-free z Low collector-emitter saturation voltage. z Complementary types:BCW67,BCW68(PNP) APPLICATIONS z General purpose medium power amplifier. z Switching appilication. Production specification BCW65/66 SOT-23 ORDERING INFORMATION Type No. Marking BCW65A/B/C BCW66F/G/H EA/EB/EC EA/EB/EC Package Code SOT-23 SOT-23 MAXIMUM RATI. |
| Part Number | BCW66 |
| Manufacturer | BLUE ROCKET ELECTRONICS |
| Title | Silicon NPN transistor |
| Description | SOT-23 NPN 。Silicon NPN transistor in a SOT-23 Plastic Package. / Features BCW68 。 Complementary to BCW68. / Applications 。 Medium power amplifier applications. / Equivalent Circuit / Pinning 3 2 1 PIN1：Emitter PIN 2：Base PIN 3：Collector / hFE Classifications & Marking hFE Classi. |
| Features | BCW68 。 Complementary to BCW68. / Applications 。 Medium power amplifier applications. / Equivalent Circuit / Pinning 3 2 1 PIN1：Emitter PIN 2：Base PIN 3：Collector / hFE Classifications & Marking hFE Classifications Symbol hFE Range F 100～250 G 160～400 Marking HDAO HDAY H 250～630 HDAG http://www.fsbrec.com 1/6 BCW66 Rev.E Mar.-2016 DATA SHEET / Absolute Maximum Ratings(Ta=2. |
| Part Number | BCW66 |
| Manufacturer | NXP |
| Title | NPN general-purpose transistor |
| Description | NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complements: BCW68F/G/H 2 Features and benefits • High current • AEC-Q101 qualified 3 Applications • General-purpose switching and amplification 4 Quick reference data Table 1. Quick . |
| Features |
and benefits
• High current • AEC-Q101 qualified 3 Applications • General-purpose switching and amplification 4 Quick reference data Table 1. Quick reference data Symbol Parameter VCEO IC ICM hFE collector-emitter voltage collector current peak collector current DC current gain BCW66F BCW66G BCW66H [1] pulsed: tp ≤ 300 μs, δ ≤ 0.02 Conditions open base single pulse; tp ≤ 1 ms VCE = 1 V. |
| Part Number | BCW66 |
| Manufacturer | JCET |
| Title | NPN Transistor |
| Description | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BCW66 TRANSISTOR (NPN) FEATURES Complementary to BCW68 BCW66 is subdivided into three groups F,G and H according to DC current gain SOT-23 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless other. |
| Features | Complementary to BCW68 BCW66 is subdivided into three groups F,G and H according to DC current gain SOT-23 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temper. |
| Part Number | BCW66 |
| Manufacturer | Infineon Technologies AG |
| Title | NPN Silicon AF Transistor |
| Description | BCW65, BCW66 NPN Silicon AF Transistor For general AF applications High current gain Low collector-emitter saturation voltage Complementary types: BCW67, BCW68 (PNP) 3 2 1 VPS05161 Type BCW65A BCW65B BCW65C BCW66F BCW66G BCW66H Maximum Ratings Parameter Marking EAs EBs ECs EFs EGs EHs 1=. |
| Features | at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 32 V, IE = 0 VCB = 45 V, IE = 0 Collector cutoff current VCB = 32 V, IE = 0 , TA = 150 °C VCB = 45 V, IE = 0 , TA = 150 °. |
| Part Number | BCW66 |
| Manufacturer | nexperia |
| Title | 800mA NPN general-purpose transistor |
| Description | NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complements: BCW68F/G/H 2 Features and benefits • High current • AEC-Q101 qualified 3 Applications • General-purpose switching and amplification 4 Quick reference data Table 1. Quick . |
| Features |
and benefits
• High current • AEC-Q101 qualified 3 Applications • General-purpose switching and amplification 4 Quick reference data Table 1. Quick reference data Symbol Parameter VCEO IC ICM hFE collector-emitter voltage collector current peak collector current DC current gain BCW66F BCW66G BCW66H [1] pulsed: tp ≤ 300 μs, δ ≤ 0.02 Conditions open base single pulse; tp ≤ 1 ms VCE = 1 V. |
| Part Number | BCW66 |
| Manufacturer | Central Semiconductor |
| Title | SILICON NPN TRANSISTORS |
| Description | The CENTRAL SEMICONDUCTOR BCW65 and BCW66 series devices are NPN silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE: SEE MARKING CODE TABLE ON FOLLOWING PAGE SOT-. |
| Features | , TA=150°C IEBO VEB=4.0V BVCBO IC=10μA (BCW65) 60 BVCBO IC=10μA (BCW66) 75 BVCEO IC=10mA (BCW65) 32 BVCEO IC=10mA (BCW66) 45 BVEBO IE=10μA 5.0 VCE(SAT) IC=100mA, IB=10mA VCE(SAT) IC=500mA, IB=50mA VBE(SAT) IC=100mA, IB=10mA VBE(SAT) IC=500mA, IB=50mA fT VCE=5.0V, IC=50mA, f=20MHz 170 Cc VCB=10V, IE=0, f=1.0MHz 8.0 Ce VEB=0.5V, IC=0, f=1.0MHz 50 MAX 20 20 20 0.3 0.7 1. |
| Part Number | BCW66 |
| Manufacturer | Kexin |
| Title | NPN Transistor |
| Description | SMD Type Transistors NPN Transistors BCW66 (KCW66) ■ Features ● BCW66 is subdivided into three groups F,G and H according to DC current gain ● Complementary to BCW68 +0.22.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.21.6 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0. |
| Features |
● BCW66 is subdivided into three groups F,G and H according to DC current gain ● Complementary to BCW68 +0.22.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.21.6 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 +0.21.1 -0.1 1. Base 2. Emitter 3. Collector 0-0.1 +0.10.68 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter . |
| Part Number | BCW66 |
| Manufacturer | Multicomp |
| Title | NPN General Purpose Amplifier |
| Description | Features: tFor general AF appilications tHigh current gain tLow collector-emitter saturation voltage tComplementary types:BCW67,BCW68(PNP) Applications: t tSwitching application BCW65/BCW66 Ordering Information Type No. BCW65A/B/C BCW66F/G/H Marking: EA/EB/EC EF/EG/EH Maximum Ratings & Cha. |
| Features | tFor general AF appilications tHigh current gain tLow collector-emitter saturation voltage tComplementary types:BCW67,BCW68(PNP) Applications: t tSwitching application BCW65/BCW66 Ordering Information Type No. BCW65A/B/C BCW66F/G/H Marking: EA/EB/EC EF/EG/EH Maximum Ratings & Characteristics: Tamb=25o Parameter: Collector - Base Voltage - BCW65 - BCW66 Collector - Emitter Voltage - . |
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