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| Part Number | BCW60 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BCW60 |
| Manufacturer | Siemens Semiconductor Group |
| Title | NPN Silicon AF Transistors (For AF input stages and driver applications High current gain) |
| Description | NPN Silicon AF Transistors BCW 60 BCX 70 q q q q q For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW 61, BCX 71 (PNP) Type BCW 60 A BCW 60 B BCW 60 C BCW 60 D BCW 60 FF BCW 60 FN BCX . |
| Features |
t Rth JA Rth JS
≤ ≤
Symbol BCW 60 VCE0 VCB0 VEB0 IC ICM IBM Ptot Tj Tstg 32 32
Values BCW 60 FF BCX 70 32 32 5 100 200 200 330 150 – 65 … + 150 45 45 Unit V mA mW ˚C 310 240 K/W 1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 2 BCW 60 BCX 70 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristi. |
| Part Number | BCW60 |
| Manufacturer | Vishay |
| Title | Small Signal Transistors |
| Description | BCW60 Series New Product Vishay Semiconductors formerly General Semiconductor Small Signal Transistors (NPN) TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) 3 Top View .056 (1.43) .052 (1.33) 12 .037(0.95) .037(0.95) Pin Configuration 1. Base 2. Emitter 3. Collector Mounting Pad Layout . |
| Features |
• NPN Silicon Epitaxial Planar Transistors • Suited for low level, low noise, low frequency applications in hybrid cicuits. • Low Current, Low Voltage. • As complementary types, BCW61 Series PNP transistors are recommended. Mechanical Data Case: SOT-23 Plastic Package Weight: approx. 0.008g Marking Code: BCW60A = AA BCW60B = AB BCW60C = AC BCW60D = AD Packaging Codes/Options: E8/10K per 13” . |
| Part Number | BCW60 |
| Manufacturer | SEMTECH |
| Title | NPN Silicon Epitaxial Planar Transistors |
| Description | BCW60 NPN Silicon Epitaxial Planar Transistors for general purpose switching and amplification. These transistors are subdivided into three groups B, C and D, according to their current gain. As complementary types the PNP transistors BCW61 are recommended. SOT-23 Plastic Package Absolute Maximum . |
| Features | . |
| Part Number | BCW60 |
| Manufacturer | NXP |
| Title | NPN general purpose transistors |
| Description | NPN transistor in a SOT23 plastic package. PNP complements: BCW61 series. handbook, halfpage BCW60 series PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 MARKING TYPE NUMBER BCW60B BCW60C BCW60D Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. LIMITING VALUES In accordance . |
| Features |
• Low current (max. 100 mA) • Low voltage (max. 32 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complements: BCW61 series. handbook, halfpage BCW60 series PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 MARKING TYPE NUMBER BCW60B BCW60C BCW60D Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. LIM. |
| Part Number | BCW60 |
| Manufacturer | Infineon Technologies AG |
| Title | NPN Silicon AF Transistors |
| Description | BCW60, BCX70 NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW61, BCX71 (PNP) 3 2 1 VPS05161 Type BCW60A BCW60B BCW60C BCW60D BCW60FF BCW60FN BCX7. |
| Features | l Resistance Junction - soldering point 1) RthJS 240 K/W Unit max. V Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 1 µA, IC = 0 1For calculation of R thJA please refer to Application. |
similar datasheet
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|---|---|---|---|---|
| 1 | BCW60A |
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| 2 | BCW60A |
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| 3 | BCW60A |
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