Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | BCW60A |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BCW60A |
| Manufacturer | Fairchild Semiconductor |
| Title | Transistor |
| Description | BCW60A/B/C/D BCW60A/B/C/D General Purpose Transistor NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter VCBO VCEO VEBO IC PC TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Diss. |
| Features | F Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Output Capacitance Current Gain Bandwidth Product Noise Figure tON Turn On Time tOFF Turn Off Time IC=50mA, IB=1.25mA IC=10mA, IB=0.25mA IC=50mA, IB=1.25mA IC=10mA, IB=0.25mA VCE=5V, IC=2mA VCB=10V, IE=0, f=1MHz IC=10mA, VCE=5V, f=100MHz IC=0.2mA, VCE=5V RG=2KΩ, f=1KHz IC=10mA, IB1=1mA VBB=3.6V, IB. |
| Part Number | BCW60A |
| Manufacturer | Samsung semiconductor |
| Title | NPN EPITAXIAL SILICON TRANSISTOR |
| Description | . |
| Features | . |
| Part Number | BCW60A |
| Manufacturer | Infineon Technologies AG |
| Title | NPN Silicon AF Transistors |
| Description | BCW60, BCX70 NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW61, BCX71 (PNP) 3 2 1 VPS05161 Type BCW60A BCW60B BCW60C BCW60D BCW60FF BCW60FN BCX7. |
| Features | l Resistance Junction - soldering point 1) RthJS 240 K/W Unit max. V Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 1 µA, IC = 0 1For calculation of R thJA please refer to Application. |
| Part Number | BCW60A |
| Manufacturer | Motorola |
| Title | GENERAL PURPOSE TRANSISTOR |
| Description | BCW60A,B,C,D MAXIMUM RATINGS CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) GENERAL PURPOSE TRANSISTOR NPN SILICON Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous THERMAL CHARACTERISTICS Symbol vCEO VCBO vEBO 'C Characteristic 'Total Devi. |
| Features | . |
| Part Number | BCW60A |
| Manufacturer | Vishay |
| Title | Small Signal Transistors |
| Description | BCW60 Series New Product Vishay Semiconductors formerly General Semiconductor Small Signal Transistors (NPN) TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) 3 Top View .056 (1.43) .052 (1.33) 12 .037(0.95) .037(0.95) Pin Configuration 1. Base 2. Emitter 3. Collector Mounting Pad Layout . |
| Features |
• NPN Silicon Epitaxial Planar Transistors • Suited for low level, low noise, low frequency applications in hybrid cicuits. • Low Current, Low Voltage. • As complementary types, BCW61 Series PNP transistors are recommended. Mechanical Data Case: SOT-23 Plastic Package Weight: approx. 0.008g Marking Code: BCW60A = AA BCW60B = AB BCW60C = AC BCW60D = AD Packaging Codes/Options: E8/10K per 13” . |
| Part Number | BCW60A |
| Manufacturer | CDIL |
| Title | SILICON PLANAR EPITAXIAL TRANSISTORS |
| Description | Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW60A BCW60B BCW60C BCW60D SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N silicon transistors Marking BCW60A = AA BCW60B = AB BCW60C = AC BCW60D = AD PACKAGE OUTLINE DETAILS ALL DIM. |
| Features |
se) Emitter –base voltage (open collector) Collector current (d.c.) Base current Total power dissipation up to Tamb: 25 °C Storage temperature Junction temperature THERMAL RESISTANCE From junction to ambient* CHARACTERISTICS Tamb = 25 °C unless otherwise specified Collector –emitter cut –off current VBE = 0; VCE = 32 V VBE = 0; VCE = 32V; Tamb = 150°C Emitter –base cut –off current IC = 0; VEB = 4 V Sa. |
| Part Number | BCW60A |
| Manufacturer | Diotec |
| Title | Surface Mount General Purpose Si-Epi-Planar Transistors |
| Description | BCW60A ... BCW60D BCW60A ... BCW60D NPN Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage Version 2006-07-31 Power dissipation – Verlustleistung 2.9 ±0.1 0.4 3 Type Code 1 2 1.1 2.5 max 1.3±0.1 Plastic case Kunststoffgehä. |
| Features | . |
| Part Number | BCW60A |
| Manufacturer | KEXIN |
| Title | NPN General Purpose Transistors |
| Description | SMD Type NPN General Purpose Transistors BCW60A/B/C/D Transistors IC SOT-23 Unit: mm Features NPN epitaxial silicon transistor. +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absol. |
| Features | NPN epitaxial silicon transistor. +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Storage temperature Symbol VCBO VCEO VEBO IC. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BCW60 |
NXP |
NPN general purpose transistors |
|
| 2 | BCW60 |
Siemens Semiconductor Group |
NPN Silicon AF Transistors (For AF input stages and driver applications High current gain) |
|
| 3 | BCW60 |
Infineon Technologies AG |
NPN Silicon AF Transistors |
|
| 4 | BCW60 |
Vishay |
Small Signal Transistors |
|
| 5 | BCW60 |
SEMTECH |
NPN Silicon Epitaxial Planar Transistors |
|
| 6 | BCW60 |
Zetex Semiconductors |
SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS |
|
| 7 | BCW60ALT1 |
Motorola Inc |
General Purpose Transistors |
|
| 8 | BCW60B |
Samsung semiconductor |
NPN EPITAXIAL SILICON TRANSISTOR |
|
| 9 | BCW60B |
NXP |
NPN general purpose transistors |
|
| 10 | BCW60B |
Siemens Semiconductor Group |
NPN Silicon AF Transistors (For AF input stages and driver applications High current gain) |
|
Desde 2024. D4U Semiconductor.
|