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| Part Number | BCW61D |
| Distributor | Stock | Price | Buy |
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| Part Number | BCW61D |
| Manufacturer | Infineon |
| Title | PNP Silicon AF Transistors |
| Description | PNP Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW60, BCX70 (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BCW61..., BCX71.... |
| Features | . |
| Part Number | BCW61D |
| Manufacturer | Fairchild Semiconductor |
| Title | Transistor |
| Description | BCW61A/B/C/D BCW61A/B/C/D General Purpose Transistor 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltag. |
| Features | Collector-Emitter Saturation Voltage VBE (sat) Base-Emitter Saturation Voltage VBE (on) Cob Base-Emitter On Voltage Output Capacitance IC= -50mA, IB= -1.25mA IC= -10mA, IB= -0.25mA IC= -50mA, IB= -1.25mA IC= -10mA, IB= -0.25mA VCE= -5V, IC= -2mA VCB= -10V, IE=0 f=1MHz NF Noise Figure tON Turn On Time tOFF Turn Off Time IC= -0.2mA, VCE= -5V RG=20KΩ, f=1KHz IC= -10mA, IB1= -1mA VBB= -3.6. |
| Part Number | BCW61D |
| Manufacturer | CDIL |
| Title | SILICON PLANAR EPITAXIAL TRANSISTORS |
| Description | Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW61A BCW61B BCW61C BCW61D SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking BCW61A = BA BCW61B = BB BCW61C = BC BCW61D = BD PACKAGE OUTLINE DETAILS ALL DIME. |
| Features |
r –base voltage (open collector) Collector current (d.c.) Base current Total power dissipation up to Tamb = 25 °C Storage temperatu re Junction temperature –VCES –VCE0 –VEB0 –IC –lB Ptot Tstg Tj max. 32 V max. 32 V max. 5 V max. 200 mA max. 50 mA max. 250 mW –55 to +150 °C max. 150 ° C THERMAL RESISTANCE From junction to ambient Rth j –a = 500 K/W CHARACTERISTICS Tamb = 25 °C unless otherwise . |
| Part Number | BCW61D |
| Manufacturer | NXP |
| Title | PNP general purpose transistors |
| Description | PNP transistor in a SOT23 plastic package. NPN complement: BCW60. MARKING TYPE NUMBER BCW61B BCW61C BCW61D Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) BB∗ BC∗ BD∗ Top view handbook, halfpage BCW61 series PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 2 . |
| Features |
• Low current (max. 100 mA) • Low voltage (max. 32 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complement: BCW60. MARKING TYPE NUMBER BCW61B BCW61C BCW61D Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) BB∗ BC∗ BD∗ Top view handbook, halfpage BCW61 series PINNING PIN 1 2 3 base emitter coll. |
| Part Number | BCW61D |
| Manufacturer | Siemens Semiconductor Group |
| Title | PNP Silicon AF Transistors (For AF input stages and driver applications High current gain) |
| Description | PNP Silicon AF Transistors BCW 61 BCX 71 q q q q q For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW 60, BCX 70 (NPN) Type BCW 61 A BCW 61 B BCW 61 C BCW 61 D BCW 61 FF BCW 61 FN BCX . |
| Features |
h JA Rth JS
≤ ≤
Symbol BCW 61 VCE0 VCB0 VEB0 IC ICM IBM Ptot Tj Tstg 32 32
Values BCW 61 FF BCX 71 32 32 5 100 200 200 330 150 – 65 … + 150 45 45 Unit V mA mW ˚C 310 240 K/W 1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 2 BCW 61 BCX 71 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics C. |
| Part Number | BCW61D |
| Manufacturer | Diotec Semiconductor |
| Title | (BCW61x) Surface Mount General Purpose Si-Epi-Planar Transistors |
| Description | BCW61A ... BCW61D BCW61A ... BCW61D PNP Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 2.9 ±0.1 0.4 3 1.3±0.1 1.1 PNP 250 mW SOT-23 (TO-236) 0.01 g Version 2006-07-31 Plastic case Kunststof. |
| Features |
atur B open E open C open - VCEO - VCBO - VEB0 Ptot - IC - ICM - IBM Tj TS
2.5 max
Grenzwerte (TA = 25°C) BCW60A ... BCW60D 32 V 32 V 5V 250 mW 1) 100 mA 200 mA 200 mA -55...+150°C -55…+150°C
Characteristics (Tj = 25°C) Min. DC current gain – Kollektor-Basis-Stromverhältnis - VCE = 5 V, - IC = 10 µA 2) Kennwerte (Tj = 25°C) Typ. 140 200 300 460 170 250 350 500 – – – – Max. – – – – 220 310 460 . |
| Part Number | BCW61D |
| Manufacturer | Vishay |
| Title | Small Signal Transistors |
| Description | BCW61 Series New Product Vishay Semiconductors formerly General Semiconductor Small Signal Transistors (PNP) TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) 3 Top View Mounting Pad Layout .056 (1.43) .052 (1.33) Pin Configuration 1. Base 2. Emitter 3. Collector 0.031 (0.8) 1 2 0.035 (0.9). |
| Features |
• PNP Silicon Epitaxial Planar Transistors • Suited for low level, low noise, low frequency applications in hybrid cicuits. • Low Current, Low Voltage. • As complementary types, BCW60 Series NPN transistors are recommended. Maximum Ratings & Thermal Characteristics Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Peak Collector Cu. |
| Part Number | BCW61D |
| Manufacturer | Central Semiconductor |
| Title | PNP SILICON TRANSISTOR |
| Description | The CENTRAL SEMICONDUCTOR BCW61B Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low level, low noise applications. MARKING CODES: BCW61B : BB BCW61C : BC BCW61D : BD SOT-23 CASE MAXIMUM RATINGS (TA=25°C. |
| Features | V, IC=0, f=1.0MHz VCE=5.0V, IC=0.2mA, RS=2.0kΩ, f=1.0kHz, BW=200Hz VCC=10V, IC=10mA, RL=990Ω, IB1=IB2=1.0mA VCC=10V, IC=10mA, RL=990Ω, IB1=IB2=1.0mA MAX 20 20 0.25 0.55 0.85 1.05 0.75 6.0 6.0 dB 150 800 hFE VCE=5.0V, IC=10µA hFE VCE=5.0V, IC=2.0mA hFE VCE=1.0V, IC=50mA hfe VCE=5.0V, IC=2.0mA, f=1.0kHz BCW61B MIN MAX 30 140 310 80 175 350 BCW61C MIN MAX 40 250 460 100 250 500 UNITS V V V mA. |
| Part Number | BCW61D |
| Manufacturer | Kexin |
| Title | General Purpose Transistor |
| Description | SMD Type General Purpose Transistor BCW61A/B/C/D TransistIoCrs Features PNP Epitaxial Silicon Transistor +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 unless otherwise noted Parameter Collector-Base Voltage Collector-Emitter Vol. |
| Features | PNP Epitaxial Silicon Transistor +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 unless otherwise noted Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature Symbol VCBO VCEO VEBO IC PC TSTG Rating -32 -32 -5 -100 350 -55 to +150 Unit V V. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BCW61 |
NXP |
PNP general purpose transistors |
|
| 2 | BCW61 |
Siemens Semiconductor Group |
PNP Silicon AF Transistors (For AF input stages and driver applications High current gain) |
|
| 3 | BCW61 |
Vishay |
Small Signal Transistors |
|
| 4 | BCW61 |
Kexin |
PNP Transistors |
|
| 5 | BCW61 |
SEMTECH |
PNP Silicon Epitaxial Planar Transistors |
|
| 6 | BCW61 |
Galaxy Electrical |
PNP General Purpose Amplifier |
|
| 7 | BCW61A |
Infineon |
PNP Silicon AF Transistors |
|
| 8 | BCW61A |
Fairchild Semiconductor |
Transistor |
|
| 9 | BCW61A |
Diotec Semiconductor |
(BCW61x) Surface Mount General Purpose Si-Epi-Planar Transistors |
|
| 10 | BCW61A |
Vishay |
Small Signal Transistors |
|
Desde 2024. D4U Semiconductor.
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